The local structure and charge transfer properties of Co-doped ZnO thin films | |
Liu, XC; Chen, ZZ; Shi, EW; Yan, CF; Huang, W; Song, LX; Zhou, KJ; Cui, MQ; He, B; Wei, SQ | |
刊名 | ACTA PHYSICA SINICA |
2009 | |
卷号 | 58期号:1页码:498-504 |
关键词 | Co-doped ZnO diluted magnetic semiconductors X-ray absorption fine structure resonant inelastic X-ray scattering spectroscopy |
其他题名 | Co掺杂ZnO薄膜的局域结构和电荷转移特性研究 |
通讯作者 | [Liu Xue-Chao ; Chen Zhi-Zhan ; Shi Er-Wei ; Yan Cheng-Feng ; Huang Wei ; Song Li-Xin] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China ; [Liu Xue-Chao ; Huang Wei] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China ; [Zhou Ke-Jin ; Cui Ming-Qi] Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100049, Peoples R China ; [He Bo ; Wei Shi-Qiang] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China |
英文摘要 | ZnO(0.95)Co(0.05) O and Zn(0.94) Co(0.05) Al(0.01) films were prepared by inductively coupled plasma enhanced physical vapor deposition with magnetic confinement system under different oxygen partial pressure. The local structure and charge transfer properties were investigated by X-ray absorption fine structure and resonant inelastic scattering spectroscopy at O-K, Co-K and Co-L edges. The Co K-edge and L-edge X-ray absorption fine structure revealed that Co(2+) ions substituted for tetrahedrally coordinated Zn(2+) ions without changing the wurtzite structure. The main defects were oxygen vacancies when the films were deposited under very low oxygen partial pressure. The resonant inelastic scattering spectroscopy indicated that the charge transfer between Co-3d and the electrons in Zn(0.94) Co(0.05) Al(0.01) O films was much stronger than that in Zn(0.95) Co(0.05) O. The oxygen partial pressure had an important effect in the charge transfer of Co-doped ZnO films. |
学科主题 | Physics |
类目[WOS] | Physics, Multidisciplinary |
研究领域[WOS] | Physics |
原文出处 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000262834300078 |
内容类型 | 期刊论文 |
源URL | [http://ir.ihep.ac.cn/handle/311005/237723] |
专题 | 高能物理研究所_多学科研究中心 |
作者单位 | 中国科学院高能物理研究所 |
推荐引用方式 GB/T 7714 | Liu, XC,Chen, ZZ,Shi, EW,et al. The local structure and charge transfer properties of Co-doped ZnO thin films[J]. ACTA PHYSICA SINICA,2009,58(1):498-504. |
APA | Liu, XC.,Chen, ZZ.,Shi, EW.,Yan, CF.,Huang, W.,...&崔明启.(2009).The local structure and charge transfer properties of Co-doped ZnO thin films.ACTA PHYSICA SINICA,58(1),498-504. |
MLA | Liu, XC,et al."The local structure and charge transfer properties of Co-doped ZnO thin films".ACTA PHYSICA SINICA 58.1(2009):498-504. |
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