Development of bulk SiC single crystal grown by physical vapor transport method

	Development of bulk SiC single crystal grown by physical vapor transport method
	Han, RJ; Xu, XG; Hu, XB; Yu, NS; Wang, JY; Tian, YL; Huang, WX; Tian YL(田玉莲); Huang WX(黄万霞)
刊名	OPTICAL MATERIALS
	2003
卷号	23 期号:1-2 页码:415-420
关键词	SiC crystal growth semiconductor defect
通讯作者	Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China ; Inst High Energy Phys, Beijing Synchrotron Radiat Lab, Beijing 100039, Peoples R China
英文摘要	This paper reviews the development of bulk SiC single crystals grown by physical vapor transport method, including the polytype control, defects and doped consideration. In addition, defects in commercial 6H-SiC wafer, such as micropipes, hexagonal voids and subgrain boundaries, are examined by transmission optical microscopy, X-ray synchrotron topography in back-reflection geometry and high-resolution X-ray diffraction methods. (C) 2003 Elsevier Science B.V. All rights reserved.
学科主题	Materials Science; Optics
类目[WOS]	Materials Science, Multidisciplinary ; Optics
研究领域[WOS]	Materials Science ; Optics
原文出处	SCI
语种	英语
WOS记录号	WOS:000183919200077
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/237383]
专题	高能物理研究所_多学科研究中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Han, RJ,Xu, XG,Hu, XB,et al. Development of bulk SiC single crystal grown by physical vapor transport method[J]. OPTICAL MATERIALS,2003,23(1-2):415-420.
APA	Han, RJ.,Xu, XG.,Hu, XB.,Yu, NS.,Wang, JY.,...&黄万霞.(2003).Development of bulk SiC single crystal grown by physical vapor transport method.OPTICAL MATERIALS,23(1-2),415-420.
MLA	Han, RJ,et al."Development of bulk SiC single crystal grown by physical vapor transport method".OPTICAL MATERIALS 23.1-2(2003):415-420.