Stimulated emission at 272 nm from an AlxGa1-xN-based multiple-quantum-well laser with two-step etched facets

	Stimulated emission at 272 nm from an AlxGa1-xN-based multiple-quantum-well laser with two-step etched facets
	Yingdong Tian ; Yun Zhang ; Jianchang Yan ; Xiang Chen ; Junxi Wang ; Jinmin Li
刊名	rsc advances
	2016-05-18
卷号	6 期号:55 页码:50245-50249
学科主题	半导体物理 ; 半导体材料 ; 半导体器件 ; 光电子学
收录类别	SCI
公开日期	2016-06-01
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/27152]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Yingdong Tian,Yun Zhang,Jianchang Yan,et al. Stimulated emission at 272 nm from an AlxGa1-xN-based multiple-quantum-well laser with two-step etched facets[J]. rsc advances,2016,6(55):50245-50249.
APA	Yingdong Tian,Yun Zhang,Jianchang Yan,Xiang Chen,Junxi Wang,&Jinmin Li.(2016).Stimulated emission at 272 nm from an AlxGa1-xN-based multiple-quantum-well laser with two-step etched facets.rsc advances,6(55),50245-50249.
MLA	Yingdong Tian,et al."Stimulated emission at 272 nm from an AlxGa1-xN-based multiple-quantum-well laser with two-step etched facets".rsc advances 6.55(2016):50245-50249.