High performance of rubrene thin film transistor by weak epitaxy growth method

	High performance of rubrene thin film transistor by weak epitaxy growth method
	Chang,Hao; Li,Weili; Tian,Hongkun; Geng,Yanhou; Wang,Haibo; Yan,Donghang; Wang,Tong
刊名	organic electronics
	2015
卷号	20 期号:9 页码:43-48
关键词	HIGH-MOBILITY ORGANIC SEMICONDUCTORS LAYER PHTHALOCYANINE MONOLAYER CRYSTALS SINGLE
通讯作者	wang,t
英文摘要	rubrene single-crystal transistors have achieved one of the highest carrier mobilities in organic semiconductors. however its thin film transistor usually shows inferior performance due to the poor film quality. therefore how to obtain large-area and high quality rubrene thin film has become a prominent challenge. this work utilized weak epitaxy growth method with new inducing layer 1,3-di( terphenyl) benzene (m-7p), and lager-area highly ordered terrace rubrene film was obtained. based on this high quality film, the hole mobility of rubrene polycrystalline thin film transistor has been enhanced to 11.6 cm(2) v-1 s(-1) with vopc as buffer layer between semiconductor layer and electrodes. this high device performance was attributed to the flat inducing layer and the single orientation of rubrene domains on m-7p layer, which may reduce grain boundaries and improve the film quality. this easy process to prepare large-area high performance rubrene device supplies a good opportunity for large-area electronic device manufacture. (c) 2015 elsevier b.v. all rights reserved.
收录类别	SCI
语种	英语
WOS记录号	WOS:000351638600007
公开日期	2016-05-31
内容类型	期刊论文
源URL	[http://ir.ciac.jl.cn/handle/322003/67877]
专题	长春应用化学研究所_长春应用化学研究所知识产出_期刊论文
推荐引用方式 GB/T 7714	Chang,Hao,Li,Weili,Tian,Hongkun,et al. High performance of rubrene thin film transistor by weak epitaxy growth method[J]. organic electronics,2015,20(9):43-48.
APA	Chang,Hao.,Li,Weili.,Tian,Hongkun.,Geng,Yanhou.,Wang,Haibo.,...&Wang,Tong.(2015).High performance of rubrene thin film transistor by weak epitaxy growth method.organic electronics,20(9),43-48.
MLA	Chang,Hao,et al."High performance of rubrene thin film transistor by weak epitaxy growth method".organic electronics 20.9(2015):43-48.