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题名	静态随机存储器总剂量辐射效应及损伤机理的研究
作者	卢健
学位类别	硕士
答辩日期	2012-05
授予单位	中国科学院研究生院
授予地点	北京
导师	余学峰
关键词	SRAM 大规模集成电路 不同偏置 总剂量辐射效应 辐射损伤
学位专业	微电子学与固体电子学
中文摘要	随着集成电路工艺的发展，半导体器件集成度不断提高，越来越多的大规模集成电路开始应用在卫星和航天器上，而空间辐射环境中的宇宙射线、质子以及电子等高能粒子，会使其功能退化甚至失效，严重影响卫星可靠性和寿命，甚至直接关系到航天任务的成败。静态随机存储器（SRAM）以其低功耗、高速度等优势在数据运算、信息处理以及自动化控制领域成为了不可或缺的部件，并且在民用乃至航天系统中都有广泛的应用。随着航天技术的发展及需要，越来越多的CMOS SRAM器件被应用到各类航天器和卫星的控制和信息处理系统中。因而，开展大规模集成电路尤其是SRAM器件辐射效应与损伤机理的研究，建立SRAM辐射损伤测试方法和评估技术，对我国发展电子对抗以及航天技术具有一定的现实意义。 本文主要以ETC公司生产的256kbit SRAM和1Mbit SRAM为研究对象，对SRAM及大规模集成电路的辐射损伤效应与损伤机理进行研究，并对评估方法进行了初步探索。主要的工作如下： 一、不同于单个晶体管或中小规模集成电路，可以进行IV测量，甚至可以分别求出氧化物陷阱电荷和界面陷阱电荷引起的漂移电压，大规模SRAM由大量晶体管组成，却仅有几十个管脚可以利用，能提供的内部信息观测点极其有限，因此，我们开发并改进了SRAM多参数测量系统，通过对SRAM器件读写功能以及其他电气参数（包括输出高低电平，静态功耗电流，动态读写电流，传输延迟）的测试来评估其辐射损伤，同时也为SRAM辐射损伤测试技术以及评估方法的探索提供了可能的途径。 二、以往的总剂量效应的研究主要是针对单管和中小规模集成电路，且辐射损伤机理和评估方法比较成熟，而对大规模集成电路的研究相对较少，而且没有统一的理论和评估方法。本论文在所内长期进行辐射效应和损伤机理研究的基础上，进行了SRAM辐射损伤测试（256Kbit和1Mbit SRAM）,并对其敏感参数及辐射效应与损伤机理进行了研究。 三、在空间环境中，SRAM不仅工作于动态读写状态，也可能工作在其他静态偏置状态，因此，为了更全面地评估其寿命，需要对其在不同偏置条件下进行总剂量效应的研究，探索其最劣偏置条件，本论文对256Kbit和1MbitSRAM共进行了多种不同偏置条件的辐照实验及退火实验。
英文摘要	With the development of the integrated circuits, the integration of semiconductor devices increases, and more and more large-scale integrated circuits begin to apply in satellites and spacecraft. But high energy particles such as cosmic ray, proton, electrons, etc in space radiation environment can lead to functional degradation and failure, which influences heavily the lifetime and reliability of satellites and spacecrafts and may directly related to whether the aero-task is successful or not. Static Random Access Memory (SRAM) becomes the essential component in digital-process, information processing, auto-control field and is widely used for civil and military purpose. To meet the need and development of space technology, more and more CMOS SRAM devices are applied in controlling and information processing system of many kinds of spacecrafts and satellites due to its low-consumption, high-speed and other advantage. So, Carrying out research on radiation damage effects and their mechanisms of large scale integrated circuits, especially SRAM devices, establishing radiation damage test methods and evaluation technique, is of great importance to develop electronic countermeasure and space technology. Here total-dose radiation effects and damage mechanism of 256K bit SRAM and 1Mbit SRAM of ETC company were investigated. Moreover, the evaluation methods were researched, the main work is as follows: Firstly, different from single tubes, middle or small scale integrated circuits, on which we can carry out I-V test, and obtain drift voltages of oxide trap charge and interface trap charge independently, SRAM is composed of amounts of transistors, but only a few pins can be utilized, so we developed special test system to test and evaluate its radiation damage. It provided a possible approach to exploration of SRAM radiation damage test technique and evaluation methods, by developing and improving multi-parameter test system, and carrying out test of read-write function and other electronic parameters (including output high-low level, static consumption current, dynamic read-write current, transmission delay) of SRAM devices. Secondly, former research of total dose radiation effects mainly focused on single tube, middle and small scale integrated circuits. Based on long-time radiation damage effects and mechanism research of our institute, different scale SRAM test of 256kbit and 1Mbit SRAM were investigated, exploring its sensitive parameter and law and mechanism of radiation damage. Thirdly, in space environment, SRAM not only works in dynamic write-read state, but also other standby conditions, so in order to evaluate its lifetime, we need to do research on different bias conditions, exploring the worst bias conditions. Radiation experiments and annealing experiments of 256bit SRAM and 1Mbit SRAM in different bias conditions were carried out，and its irradiation damage mechanism is analyzed.
内容类型	学位论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/4376]
专题	新疆理化技术研究所_材料物理与化学研究室
作者单位	中国科学院新疆理化技术研究所
推荐引用方式 GB/T 7714	卢健. 静态随机存储器总剂量辐射效应及损伤机理的研究[D]. 北京. 中国科学院研究生院. 2012.

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