High Performance Nanostructured Silicon-Organic Quasi p-n Junction Solar Cells via Low-Temperature Deposited Hole and Electron Selective Layer

	High Performance Nanostructured Silicon-Organic Quasi p-n Junction Solar Cells via Low-Temperature Deposited Hole and Electron Selective Layer
	Liu, Yuqiang 1; Zhang, Zhi-guo 2; Xia, Zhouhui 1; Zhang, Jie 3; Liu, Yuan 1; Liang, Feng 1; Li, Yongfang 2; Song, Tao 1; Yu, Xuegong 4,5; Lee, Shuit-tong 1
刊名	ACS NANO
	2016
卷号	10 期号:1 页码:704-712
关键词	silicon-organic solar cell HAT-CN inversion layer quasi p-n junction PDIN
英文摘要	Silicon-organic solar cells based on conjugated polymers such as poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) on n type silicon (n-Si) attract wide interest because of their potential for cost-effectiveness and high-efficiency. However, a lower barrier height Phi(b) and a shallow built in potential (V-bi) of Schottky junction between n-Si and PEDOT:PSS hinders the power conversion efficiency (PCE) in comparison with those of traditional p-n junction. Here, a strong inversion layer was formed on n Si surface by inserting a layer of 1, 4, 5, 8, 9, 11-hexaazatriphenylene hexacarbonitrile (HAT-CN), resulting in a quasi p-n junction. External quantum efficiency spectra, capacitance-voltage, transient photovoltage decay and minority charge carriers life mapping measurements indicated that a quasi p-n junction was built due to the strong inversion effect, resulting in a high Phi(b) and V-bi. The quasi p-n junction located on the front surface region of silicon substrates improved the short wavelength light conversion into photocurrent. In addition, a derivative perylene diimide (PDIN) layer between rear side of silicon and aluminum cathodes was used to block the holes from flowing to cathodes. As a result, the device with PDIN layer also improved photoresponse at longer wavelength. A champion PCE of 14.14% was achieved for the nanostructured silicon-organic device by combining HAT-CN and PDIN layers. The low temperature and simple device structure with quasi p-n junction promises cost-effective high performance photovoltaic techniques.
收录类别	SCI
语种	英语
公开日期	2016-05-09
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/30095]
专题	化学研究所_有机固体实验室
作者单位	1.Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Peoples R China 2.Chinese Acad Sci, Inst Chem, CAS Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China 3.Chinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China 4.Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China 5.Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
推荐引用方式 GB/T 7714	Liu, Yuqiang,Zhang, Zhi-guo,Xia, Zhouhui,et al. High Performance Nanostructured Silicon-Organic Quasi p-n Junction Solar Cells via Low-Temperature Deposited Hole and Electron Selective Layer[J]. ACS NANO,2016,10(1):704-712.
APA	Liu, Yuqiang.,Zhang, Zhi-guo.,Xia, Zhouhui.,Zhang, Jie.,Liu, Yuan.,...&Sun, Baoquan.(2016).High Performance Nanostructured Silicon-Organic Quasi p-n Junction Solar Cells via Low-Temperature Deposited Hole and Electron Selective Layer.ACS NANO,10(1),704-712.
MLA	Liu, Yuqiang,et al."High Performance Nanostructured Silicon-Organic Quasi p-n Junction Solar Cells via Low-Temperature Deposited Hole and Electron Selective Layer".ACS NANO 10.1(2016):704-712.