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Modulating the metal/organic interface via CuTCNQ decorated layer toward high performance bottom-contact single-crystal transistors
He, Liangfu1,2; Ji, Deyang1; Wang, Erjing1; Zhen, Yonggang1; Dong, Huanli1; Hu, Wenping1
刊名SCIENCE CHINA-CHEMISTRY
2015-06-01
卷号58期号:6页码:1027-1031
关键词metal charge transfer salt anthracene derivative organic single-crystal field-effect transistors
英文摘要The organic single-crystal field-effect transistors using anthracene derivative, H-Ant as an active layer with source/drain electrodes decorated by metal charge transfer salt (CuTCNQ) were fabricated. We demonstrated that this bottom-contact structure displayed an obvious improvement in the electrical characteristics relative to their pristine copper and top-contact gold electrode counterparts. This observation could be ascribed to the lower contact resistance resulting from the energetic match between electrodes and semiconductor.
收录类别SCI
语种英语
公开日期2016-05-09
内容类型期刊论文
源URL[http://ir.iccas.ac.cn/handle/121111/28125]  
专题化学研究所_有机固体实验室
作者单位1.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714
He, Liangfu,Ji, Deyang,Wang, Erjing,et al. Modulating the metal/organic interface via CuTCNQ decorated layer toward high performance bottom-contact single-crystal transistors[J]. SCIENCE CHINA-CHEMISTRY,2015,58(6):1027-1031.
APA He, Liangfu,Ji, Deyang,Wang, Erjing,Zhen, Yonggang,Dong, Huanli,&Hu, Wenping.(2015).Modulating the metal/organic interface via CuTCNQ decorated layer toward high performance bottom-contact single-crystal transistors.SCIENCE CHINA-CHEMISTRY,58(6),1027-1031.
MLA He, Liangfu,et al."Modulating the metal/organic interface via CuTCNQ decorated layer toward high performance bottom-contact single-crystal transistors".SCIENCE CHINA-CHEMISTRY 58.6(2015):1027-1031.
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