Elimination of photon quenching by a transition layer to fabricate a quenching-shield sandwich structure for 800 nm excited upconversion luminescence of nd3+-sensitized nanoparticles

	Elimination of photon quenching by a transition layer to fabricate a quenching-shield sandwich structure for 800 nm excited upconversion luminescence of nd3+-sensitized nanoparticles
	Zhong YT(钟业腾); Tian G(田甘); Gu ZJ(谷战军); Yang YJ(杨一君); Gu L(谷林); Zhao YL(赵禹亮); Ma Y(马颖); Yao JN(姚建年)
刊名	Adv. Mater.
	2013-12-12
卷号	26 期号:18 页码:2831-2837
产权排序	第一
学科主题	物理化学
公开日期	2016-05-09
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/28791]
专题	化学研究所_光化学实验室
作者单位	中国科学院化学研究所
推荐引用方式 GB/T 7714	Zhong YT,Tian G,Gu ZJ,et al. Elimination of photon quenching by a transition layer to fabricate a quenching-shield sandwich structure for 800 nm excited upconversion luminescence of nd3+-sensitized nanoparticles[J]. Adv. Mater.,2013,26(18):2831-2837.
APA	钟业腾.,田甘.,谷战军.,杨一君.,谷林.,...&姚建年.(2013).Elimination of photon quenching by a transition layer to fabricate a quenching-shield sandwich structure for 800 nm excited upconversion luminescence of nd3+-sensitized nanoparticles.Adv. Mater.,26(18),2831-2837.
MLA	钟业腾,et al."Elimination of photon quenching by a transition layer to fabricate a quenching-shield sandwich structure for 800 nm excited upconversion luminescence of nd3+-sensitized nanoparticles".Adv. Mater. 26.18(2013):2831-2837.