Structure and properties of InAs/AlAs quantum dots for broadband emission

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中科院半导体材料科学重点实验室

	Structure and properties of InAs/AlAs quantum dots for broadband emission
	Meng XQ (Meng X. Q.) ; Jin P (Jin P.) ; Liang ZM (Liang Z. M.) ; Liu FQ (Liu F. Q.) ; Wang ZG (Wang Z. G.) ; Zhang ZY (Zhang Z. Y.)
刊名	journal of applied physics
	2010
卷号	108 期号:10 页码:art. no. 103515
关键词	CHEMICAL-VAPOR-DEPOSITION
通讯作者	meng, xq, wuhan univ, key lab artificial micro & nano struct, minist educ, wuhan 430072, peoples r china. mengxq@whu.edu.cn
合作状况	国际
英文摘要	the inas quantum dots (qds) on an alas layer are grown on gaas substrates by molecular beam epitaxy technique. the properties of materials and optics of such qd structures have been investigated by cross sectional transmission electron microscopy and photoluminescence (pl) techniques. it is discovered that the inhomogeneous strain filed mainly exists below inas qds layers in the case of no wetting layer. the full width at half maximums (fwhms) and intensities of pl emission peaks of inas qds are found to be closely related to the thickness of the thin alas layers. the inas qds on an eight monolayer alas layer, with wide fwhms and large integral intensity of pl emission peaks, are favorable for producing broadband qd superluminescent diodes, external-cavity qd laser with large tuning range.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-12-28t00:52:16z no. of bitstreams: 1 structure and properties of inas-alas quantum dots for broadband emission.pdf: 232212 bytes, checksum: 42363ec09ced3f8cc2788560a370516b (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-12-28t01:00:13z (gmt) no. of bitstreams: 1 structure and properties of inas-alas quantum dots for broadband emission.pdf: 232212 bytes, checksum: 42363ec09ced3f8cc2788560a370516b (md5); made available in dspace on 2010-12-28t01:00:13z (gmt). no. of bitstreams: 1 structure and properties of inas-alas quantum dots for broadband emission.pdf: 232212 bytes, checksum: 42363ec09ced3f8cc2788560a370516b (md5) previous issue date: 2010; this work was supported by the national natural science foundation of china under grant nos. 10775106 and 60676036.; 国际
学科主题	半导体材料
收录类别	SCI
资助信息	this work was supported by the national natural science foundation of china under grant nos. 10775106 and 60676036.
语种	英语
公开日期	2010-12-28
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20685]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Meng XQ ,Jin P ,Liang ZM ,et al. Structure and properties of InAs/AlAs quantum dots for broadband emission[J]. journal of applied physics,2010,108(10):art. no. 103515.
APA	Meng XQ ,Jin P ,Liang ZM ,Liu FQ ,Wang ZG ,&Zhang ZY .(2010).Structure and properties of InAs/AlAs quantum dots for broadband emission.journal of applied physics,108(10),art. no. 103515.
MLA	Meng XQ ,et al."Structure and properties of InAs/AlAs quantum dots for broadband emission".journal of applied physics 108.10(2010):art. no. 103515.