Methods to tune the electronic states of self-organized InAs/GaAs quantum dots

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	Methods to tune the electronic states of self-organized InAs/GaAs quantum dots
	Wang H; Jiang DS; Wang H; Niu ZC
	2000
会议名称	5th international conference on the electrical transport and optical properties of inhomogeneous media (etopim5)
会议日期	jun 21-25, 1999
会议地点	hong kong, hong kong
关键词	quantum dot growth interruption quantum dot laser
页码	217-219
通讯作者	wang h chinese acad sci inst semicond natl lab superlattices & microstruct beijing 100083 peoples r china.
中文摘要	after capping inas islands with a thin enough gaas layer, growth interruption has been introduced. ejected energy of self-organized inas/gaas quantum dots has been successfully tuned in a controlled manner by changing the thickness of gaas capping layer and the time of growth interruption and inas layer thickness. the photoluminescence (pl) spectra showing the shift of the peak position reveals the tuning of the electronic states of the qd system. enhanced uniformity of quantum dots is observed judging from the decrease of full width at half maximum of fl. injection inas/gaas quantum dot lasers have been fabricated and performed on various frequencies. (c) 2000 published by elsevier science b.v. all rights reserved.
英文摘要	after capping inas islands with a thin enough gaas layer, growth interruption has been introduced. ejected energy of self-organized inas/gaas quantum dots has been successfully tuned in a controlled manner by changing the thickness of gaas capping layer and the time of growth interruption and inas layer thickness. the photoluminescence (pl) spectra showing the shift of the peak position reveals the tuning of the electronic states of the qd system. enhanced uniformity of quantum dots is observed judging from the decrease of full width at half maximum of fl. injection inas/gaas quantum dot lasers have been fabricated and performed on various frequencies. (c) 2000 published by elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:27导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:27z (gmt). no. of bitstreams: 1 2964.pdf: 122280 bytes, checksum: 8376567f65c33fac4a5d52a5d766d0a0 (md5) previous issue date: 2000; lee hysan fdn.; croucher fdn.; kc wong educ fdn.; schlumberger doll res.; aro fe.; afosr aoard.; onrasia.; chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	lee hysan fdn.; croucher fdn.; kc wong educ fdn.; schlumberger doll res.; aro fe.; afosr aoard.; onrasia.
会议录	physica b-condensed matter, 279 (1-3)
会议录出版者	elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands
会议录出版地	po box 211, 1000 ae amsterdam, netherlands
学科主题	半导体物理
语种	英语
ISSN号	0921-4526
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/15007]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang H,Jiang DS,Wang H,et al. Methods to tune the electronic states of self-organized InAs/GaAs quantum dots[C]. 见:5th international conference on the electrical transport and optical properties of inhomogeneous media (etopim5). hong kong, hong kong. jun 21-25, 1999.