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	Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice
	Jiang DS; Wang HL; Wang HL; Wang HL
	2000
会议名称	50th iumrs international conference on advanced materials
会议日期	jun 13-18, 1999
会议地点	beijing, peoples r china
关键词	superlattices GaAs/AlAs electric field domains tunnelling OSCILLATIONS
页码	141-145
通讯作者	wang jn hong kong univ sci & technol dept phys clear water bay kowloon hong kong peoples r china.
中文摘要	we have observed the transition from static to dynamic electric field domain formation induced by a transverse magnetic field and the sample temperature in a doped gaas/alas superlattice. the observations can be very well explained by a general analysis of instabilities and oscillations of the sequential tunnelling current in superlattices based solely on the magnitude of the negative differential resistance region in the tunnelling characteristic of a single barrier. both increasing magnetic field and sample temperature change the negative differential resistance and cause the transition between static and dynamic electric field domain formation. (c) 2000 elsevier science b.v. all rights reserved.
英文摘要	we have observed the transition from static to dynamic electric field domain formation induced by a transverse magnetic field and the sample temperature in a doped gaas/alas superlattice. the observations can be very well explained by a general analysis of instabilities and oscillations of the sequential tunnelling current in superlattices based solely on the magnitude of the negative differential resistance region in the tunnelling characteristic of a single barrier. both increasing magnetic field and sample temperature change the negative differential resistance and cause the transition between static and dynamic electric field domain formation. (c) 2000 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:22导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:22z (gmt). no. of bitstreams: 1 2945.pdf: 115729 bytes, checksum: 0b42355b2e01b2ff5fe309e80e61e2c5 (md5) previous issue date: 2000; lab semiconduct mat sci.; inst semiconduct.; chinese acad sci.; hong kong univ sci & technol, dept phys, kowloon, hong kong, peoples r china; chinese acad sci, inst semicond, nlsm, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	lab semiconduct mat sci.; inst semiconduct.; chinese acad sci.
会议录	physica e, 8 (2)
会议录出版者	elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands
会议录出版地	po box 211, 1000 ae amsterdam, netherlands
学科主题	半导体物理
语种	英语
ISSN号	1386-9477
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14969]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jiang DS,Wang HL,Wang HL,et al. Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice[C]. 见:50th iumrs international conference on advanced materials. beijing, peoples r china. jun 13-18, 1999.

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