Design, simulation and testing of large area silicon drift detectors and detector array for X-ray spectroscopy | |
Zhang WC ; Li Z ; Siddons DP ; Huang T ; Zhao LJ ; Kakuno EM ; Pietraski P ; Li CJ | |
2000 | |
会议名称 | nuclear science symposium (nss) |
会议日期 | oct 26-28, 1999 |
会议地点 | seattle, washington |
页码 | 1381-1385 |
通讯作者 | zhang wc brookhaven natl lab upton ny 11973 usa. |
中文摘要 | large area (25 mm(2)) silicon drift detectors and detector arrays (5x5) have been designed, simulated, and fabricated for x-ray spectroscopy. on the anode side, the hexagonal drift detector was designed with self-biasing spiral cathode rings (p(+)) of fixed resistance between rings and with a grounded guard anode to separate surface current from the anode current. two designs have been used for the p-side: symmetric self-biasing spiral cathode rings (p(+)) and a uniform backside p(+) implant. only 3 to 5 electrodes are needed to bias the detector plus an anode for signal collection. with graded electrical potential, a sub-nanoamper anode current, and a very small anode capacitance, an initial fwhm of 1.3 kev, without optimization of all parameters, has been obtained for 5.9 kev fe-55 x-ray at rt using a uniform backside detector. |
英文摘要 | large area (25 mm(2)) silicon drift detectors and detector arrays (5x5) have been designed, simulated, and fabricated for x-ray spectroscopy. on the anode side, the hexagonal drift detector was designed with self-biasing spiral cathode rings (p(+)) of fixed resistance between rings and with a grounded guard anode to separate surface current from the anode current. two designs have been used for the p-side: symmetric self-biasing spiral cathode rings (p(+)) and a uniform backside p(+) implant. only 3 to 5 electrodes are needed to bias the detector plus an anode for signal collection. with graded electrical potential, a sub-nanoamper anode current, and a very small anode capacitance, an initial fwhm of 1.3 kev, without optimization of all parameters, has been obtained for 5.9 kev fe-55 x-ray at rt using a uniform backside detector.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:21导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:21z (gmt). no. of bitstreams: 1 2942.pdf: 638210 bytes, checksum: 9966d8f651e9a4c210fcd0b8bbc1c25f (md5) previous issue date: 2000; brookhaven natl lab, upton, ny 11973 usa; chinese acad sci, inst semicond, beijing 100083, peoples r china |
收录类别 | CPCI-S |
会议录 | ieee transactions on nuclear science, 47 (4)
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会议录出版者 | ieee-inst electrical electronics engineers inc ; 345 e 47th st, new york, ny 10017-2394 usa |
会议录出版地 | 345 e 47th st, new york, ny 10017-2394 usa |
学科主题 | 半导体器件 |
语种 | 英语 |
ISSN号 | 0018-9499 |
内容类型 | 会议论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/14963] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Zhang WC,Li Z,Siddons DP,et al. Design, simulation and testing of large area silicon drift detectors and detector array for X-ray spectroscopy[C]. 见:nuclear science symposium (nss). seattle, washington. oct 26-28, 1999. |
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