Photoluminescence of nanocrystalline SiC films prepared by rf magnetron sputtering

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	Photoluminescence of nanocrystalline SiC films prepared by rf magnetron sputtering
	Liu JW ; Xie FQ ; Zhong DY ; Wang EG ; Liu WX ; Li SF ; Yang H
	2001
会议名称	chinese-german workshop on characterization and development on nanosystems
会议日期	oct 30-nov 02, 2000
会议地点	beijing, peoples r china
关键词	luminescence SiC nanocrystalline film rf sputtering RAMAN-SCATTERING
页码	s36-s39
通讯作者	liu jw chinese acad sci inst phys state key lab surface phys pob 603 beijing 100080 peoples r china.
中文摘要	amorphous sic films are deposited on si (111) substrates by rf magnetron sputtering and then annealed at 1200 degreesc for different times by a dc self-heating method in a vacuum annealing system. the crystallization of the amorphous sic is determined by raman scattering at room temperature and x-ray diffraction. the experimental result indicates that the sic nanocrystals have formed in the films. the topography of the as-annealed films is characterized by atomic force microscopy. measurements of photoluminescence of the as-annealed films show blue or violet light emission from the nanocrystalline sic films and photoluminescence peak shifts to short wavelength side as the annealing time decreases.
英文摘要	amorphous sic films are deposited on si (111) substrates by rf magnetron sputtering and then annealed at 1200 degreesc for different times by a dc self-heating method in a vacuum annealing system. the crystallization of the amorphous sic is determined by raman scattering at room temperature and x-ray diffraction. the experimental result indicates that the sic nanocrystals have formed in the films. the topography of the as-annealed films is characterized by atomic force microscopy. measurements of photoluminescence of the as-annealed films show blue or violet light emission from the nanocrystalline sic films and photoluminescence peak shifts to short wavelength side as the annealing time decreases.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:16导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:16z (gmt). no. of bitstreams: 0 previous issue date: 2001; chinese acad sci, inst phys, state key lab surface phys, beijing 100080, peoples r china; tianjin univ, sch mat sci & engn, tianjin 300072, peoples r china; chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china
收录类别	CPCI-S
会议录	chinese physics, 10
会议录出版者	chinese physical soc ; p o box 603, beijing 100080, peoples r china
会议录出版地	p o box 603, beijing 100080, peoples r china
学科主题	半导体材料
语种	英语
ISSN号	1009-1963
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14925]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu JW,Xie FQ,Zhong DY,et al. Photoluminescence of nanocrystalline SiC films prepared by rf magnetron sputtering[C]. 见:chinese-german workshop on characterization and development on nanosystems. beijing, peoples r china. oct 30-nov 02, 2000.