Si-based resonant-cavity-enhanced photodetector

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	Si-based resonant-cavity-enhanced photodetector
	Wang QM ; Li C ; Cheng BW ; Yang QQ
	2000
会议名称	conference on optical interconnects for telecommunication and data communications
会议日期	nov 08-10, 2000
会议地点	beijing, peoples r china
关键词	RCE photodetector SiGe/Si SIMOX Bragg reflector top-illumination bottom-illumination responsivity spectra
页码	107-111
通讯作者	wang qm chinese acad sci inst semicond state key lab integrated optoelect beijing 100083 peoples r china.
中文摘要	resonant-cavity-enhanced (rce) photodetectors have been demonstrated to be able to improve the bandwidth-efficiency product. we report one top-illumination and one bottom-illumination sige/si multiple quantum-well (mqw) rce photodetectors fabricated on a separation-by-implanted-oxygen (simox) wafer operating near 1300nm, the buried oxide layer in simox is used as a mirror to form a vertical cavity with the silicon dioxide/silicon bragg reflector deposited on the top surface. a peak responsivity with a reverse bias of 5v is measured 10.2ma/w at 1285nm, and a full-width at half maximum of 25nm for the top-illumination rce photodetector, and 19ma/w at 1305nm, and a full-width at half maximum of 14nm for the bottom-illumination one. the external quantum efficiency of the bottom-illumination rce photodetector is up to 2.9% at 1305nm with a reverse bias of 25v. the responsivity of the bottom-illumination rce photodetector is improved by two-fold compared with that of the top-illumination one.
英文摘要	resonant-cavity-enhanced (rce) photodetectors have been demonstrated to be able to improve the bandwidth-efficiency product. we report one top-illumination and one bottom-illumination sige/si multiple quantum-well (mqw) rce photodetectors fabricated on a separation-by-implanted-oxygen (simox) wafer operating near 1300nm, the buried oxide layer in simox is used as a mirror to form a vertical cavity with the silicon dioxide/silicon bragg reflector deposited on the top surface. a peak responsivity with a reverse bias of 5v is measured 10.2ma/w at 1285nm, and a full-width at half maximum of 25nm for the top-illumination rce photodetector, and 19ma/w at 1305nm, and a full-width at half maximum of 14nm for the bottom-illumination one. the external quantum efficiency of the bottom-illumination rce photodetector is up to 2.9% at 1305nm with a reverse bias of 25v. the responsivity of the bottom-illumination rce photodetector is improved by two-fold compared with that of the top-illumination one.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:14导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:14z (gmt). no. of bitstreams: 1 2888.pdf: 109005 bytes, checksum: eee6798b7621b608eef26aa0419787ef (md5) previous issue date: 2000; china opt & optoelectr manufacturers assoc.; chinese phys soc.; spie.; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	china opt & optoelectr manufacturers assoc.; chinese phys soc.; spie.
会议录	optical interconnects for telecommunication and data communications, 4225
会议录出版者	spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
会议录出版地	1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题	光电子学
语种	英语
ISSN号	0277-786x
ISBN号	0-8194-3896-0
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14913]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang QM,Li C,Cheng BW,et al. Si-based resonant-cavity-enhanced photodetector[C]. 见:conference on optical interconnects for telecommunication and data communications. beijing, peoples r china. nov 08-10, 2000.