Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition
	Sun XL ; Yang H ; Zhu JJ ; Wang YT ; Chen Y ; Li GH ; Wang ZG
	2001
会议名称	4th international conference on nitride semiconductors (icns-4)
会议日期	jul 16-20, 2001
会议地点	denver, colorado
关键词	GALLIUM NITRIDE LUMINESCENCE BULK
页码	653-657
通讯作者	sun xl ohio state univ dept elect engn columbus oh 43210 usa.
中文摘要	in this paper. we investigate the influences of the initial nitridation of sapphire substrates on the optical and structural characterizations in gan films. two gan samples with and without 3 min nitridation process were investigated by photoluminescence (pl) spectroscopy in the temperature range of 12-300 k and double-crystal x-ray diffraction (xrd). in the 12 k pl spectra of the gan sample without nitridation, four dominant peaks at 3.476, 3.409 3.362 and 3.308 ev were observed, which were assigned to donor bound exciton, excitons bound to stacking faults and extended structural defects. in the sample with nitridation, three peaks at 3.453, 3.365. and 3.308 ev were observed at 12 k, no peak related to stacking faults. xrd results at different reflections showed that there are more stacking faults in the samples without nitridation.
英文摘要	in this paper. we investigate the influences of the initial nitridation of sapphire substrates on the optical and structural characterizations in gan films. two gan samples with and without 3 min nitridation process were investigated by photoluminescence (pl) spectroscopy in the temperature range of 12-300 k and double-crystal x-ray diffraction (xrd). in the 12 k pl spectra of the gan sample without nitridation, four dominant peaks at 3.476, 3.409 3.362 and 3.308 ev were observed, which were assigned to donor bound exciton, excitons bound to stacking faults and extended structural defects. in the sample with nitridation, three peaks at 3.453, 3.365. and 3.308 ev were observed at 12 k, no peak related to stacking faults. xrd results at different reflections showed that there are more stacking faults in the samples without nitridation.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:14导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:14z (gmt). no. of bitstreams: 1 2879.pdf: 112765 bytes, checksum: f54c1d267b31cd82a8dddd56b8e68695 (md5) previous issue date: 2001; cas, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china; cas, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china; cas, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
收录类别	CPCI-S
会议录	physica status solidi a-applied research, 188 (2)
会议录出版者	wiley-v c h verlag gmbh ; po box 10 11 61, d-69451 weinheim, germany
会议录出版地	po box 10 11 61, d-69451 weinheim, germany
学科主题	半导体材料
语种	英语
ISSN号	0031-8965
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14909]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Sun XL,Yang H,Zhu JJ,et al. Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition[C]. 见:4th international conference on nitride semiconductors (icns-4). denver, colorado. jul 16-20, 2001.