Transport properties through quantum dot in a vertical electric field

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	Transport properties through quantum dot in a vertical electric field
	Li SS ; Xia JB
	2003
会议名称	international conference on superlattices nano-structures and nano-devices (icsnn-02)
会议日期	jul 22-26, 2002
会议地点	toulouse, france
关键词	HOLE TRANSPORT
页码	147-148
通讯作者	li ss chinese acad sci inst semicond state key lab superlattices & microstruct pob 912 beijing 100083 peoples r china.
中文摘要	the transport properties through a quantum dot are calculated using the recursion method. the results show that the electric fields can move the conductive peaks along the high- and low-energies. the electric field changes the intensity of conductance slightly. our theoretical results should be useful for researching and making low-dimensional semiconductor optoelectronic devices. (c) 2002 elsevier science b.v. all rights reserved.
英文摘要	the transport properties through a quantum dot are calculated using the recursion method. the results show that the electric fields can move the conductive peaks along the high- and low-energies. the electric field changes the intensity of conductance slightly. our theoretical results should be useful for researching and making low-dimensional semiconductor optoelectronic devices. (c) 2002 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:05导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:05z (gmt). no. of bitstreams: 1 2817.pdf: 69304 bytes, checksum: b7ae272217d66d3875701ee5c9ba3617 (md5) previous issue date: 2003; chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china
收录类别	CPCI-S
会议录	physica e-low-dimensional systems & nanostructures, 17 (1-4)
会议录出版者	elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands
会议录出版地	po box 211, 1000 ae amsterdam, netherlands
学科主题	半导体物理
语种	英语
ISSN号	1386-9477
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14845]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li SS,Xia JB. Transport properties through quantum dot in a vertical electric field[C]. 见:international conference on superlattices nano-structures and nano-devices (icsnn-02). toulouse, france. jul 22-26, 2002.