Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD)

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	Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD)
	Yu JZ ; Li C ; Cheng BW ; Wang QM
	2004
会议名称	10th international autumn meeting on gettering and defect engineering in semiconductor technology (gadest 2003)
会议日期	sep 21-26, 2003
会议地点	berlin, germany
关键词	DBR (distributed bragg reflector) MQW (multiple quantum wells) optical fiber communication photodiode RCE-PD (resonant-cavity-enhanced photodiode) responsivity SiGe/Si SOI
页码	255-260
通讯作者	yu jz chinese acad sci inst semicond state key lab integrated optoelect pob 912 beijing 100083 peoples r china. 电子邮箱地址: jzyu@red.semi.ac.cn
中文摘要	si1-xgex/si optoelectronic devices are promising for the monolithic integration with silicon-based microelectronics. sige/si mqw rce-pd (resonant-cavity-enhanced photodiodes) with different structures were investigated in this work. design and fabrication of top- and bottom-incident rce-pd, such as growth of sige mqw (multiple quantum wells) on si and soi (si on insulator) wafers, bonding between sige epitaxial wafer and sor (surface optical reflector) consisting of sio2/si dbr (distributed bragg reflector) films on si, and performances of rce-pd, were presented. the responsivity of 44ma/w at 1.314 mum and the fwhm of 6nm were obtained at bias of 10v. the highest external quantum efficiency measured in the investigation is 4.2%.
英文摘要	si1-xgex/si optoelectronic devices are promising for the monolithic integration with silicon-based microelectronics. sige/si mqw rce-pd (resonant-cavity-enhanced photodiodes) with different structures were investigated in this work. design and fabrication of top- and bottom-incident rce-pd, such as growth of sige mqw (multiple quantum wells) on si and soi (si on insulator) wafers, bonding between sige epitaxial wafer and sor (surface optical reflector) consisting of sio2/si dbr (distributed bragg reflector) films on si, and performances of rce-pd, were presented. the responsivity of 44ma/w at 1.314 mum and the fwhm of 6nm were obtained at bias of 10v. the highest external quantum efficiency measured in the investigation is 4.2%.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:03导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:03z (gmt). no. of bitstreams: 1 2792.pdf: 470844 bytes, checksum: 66af8e170196564eb5f70361f3788179 (md5) previous issue date: 2004; ihp frankfurt.; ihp btu joint lab.; european mat res soc.; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	ihp frankfurt.; ihp btu joint lab.; european mat res soc.
会议录	gettering and defect engineering in semiconductor technology, 95-96
会议录出版者	trans tech publications ltd ; brandrain 6, ch-8707 zurich-uetikon, switzerland
会议录出版地	brandrain 6, ch-8707 zurich-uetikon, switzerland
学科主题	光电子学
语种	英语
ISSN号	1012-0394
ISBN号	3-908450-82-9
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14835]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yu JZ,Li C,Cheng BW,et al. Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD)[C]. 见:10th international autumn meeting on gettering and defect engineering in semiconductor technology (gadest 2003). berlin, germany. sep 21-26, 2003.