Cooperative spontaneous emission of excitons in the semiconductor microcavity

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Cooperative spontaneous emission of excitons in the semiconductor microcavity
	Liu S ; Lin SM ; Wang QM
	2000
会议名称	conference on vertical-cavity surface-emitting lasers iv
会议日期	jan 26-28, 2000
会议地点	san jose, ca
关键词	spontaneous emission microcavity anisotropy polarized exciton SURFACE-EMITTING LASERS POLARITON PHOTOLUMINESCENCE CAVITY OPERATION
页码	136-141
通讯作者	liu s chinese academe inst semicond natl optoelect integrat lab beijing 100083 peoples r china.
中文摘要	we have studied the spontaneous emission of polarized excitons in the gainp/algainp vcsel from 30k to room temperature. it is observed that the spontaneous emission peak enters and leaves the resonant regime. at the resonant regime, the emission intensities of the perpendicular and horizontal polarized exciton are enhanced at different ratio to those in non-resonant regime. these experiment results are explained through the dressed exciton theory of the semiconductor microcavity device. from this theory, the intensity enhancement and the polarization dependence are understood as cooperative emission and the microcavity anisotropy.
英文摘要	we have studied the spontaneous emission of polarized excitons in the gainp/algainp vcsel from 30k to room temperature. it is observed that the spontaneous emission peak enters and leaves the resonant regime. at the resonant regime, the emission intensities of the perpendicular and horizontal polarized exciton are enhanced at different ratio to those in non-resonant regime. these experiment results are explained through the dressed exciton theory of the semiconductor microcavity device. from this theory, the intensity enhancement and the polarization dependence are understood as cooperative emission and the microcavity anisotropy.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:00z (gmt). no. of bitstreams: 1 2939.pdf: 243651 bytes, checksum: 5fd4a2e16ccae9160d1870d4aa2abdae (md5) previous issue date: 2000; spie.; chinese academe, inst semicond, natl optoelect integrat lab, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	spie.
会议录	vertical-cavity surface-emitting lasers iv, 3946
会议录出版者	spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
会议录出版地	1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题	光电子学
语种	英语
ISSN号	0277-786x
ISBN号	0-8194-3563-5
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13773]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu S,Lin SM,Wang QM. Cooperative spontaneous emission of excitons in the semiconductor microcavity[C]. 见:conference on vertical-cavity surface-emitting lasers iv. san jose, ca. jan 26-28, 2000.