Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure | |
Xu Y ; Zhu XP ; Ye XJ ; Kang XN ; Cao Q ; Guo L ; Chen LH | |
2004 | |
会议名称 | asia-pacific optical and wireless communications conference (apoc 2003) |
会议日期 | nov 04-06, 2003 |
会议地点 | wuhan, peoples r china |
关键词 | finite-difference methods AlGaInP laser diodes RISA OPERATION LAYER NM |
页码 | 29-37 |
通讯作者 | xu y chinese acad sci inst semicond beijing 100083 peoples r china. |
中文摘要 | optical modes of algainp laser diodes with real refractive index guided self-aligned (risa) structure were analyzed theoretically on the basis of two-dimension semivectorial finite-difference methods (sv-fdms) and the computed simulation results were presented. the eigenvalue and eigenfunction of this two-dimension waveguide were obtained and the dependence of the confinement factor and beam divergence angles in the direction of parallel and perpendicular to the pn junction on the structure parameters such as the number of quantum wells, the al composition of the cladding layers, the ridge width, the waveguide thickness and the residual thickness of the upper p-cladding layer were investigated. the results can provide optimized structure parameters and help us design and fabricate high performance algainp laser diodes with a low beam aspect ratio required for optical storage applications. |
英文摘要 | optical modes of algainp laser diodes with real refractive index guided self-aligned (risa) structure were analyzed theoretically on the basis of two-dimension semivectorial finite-difference methods (sv-fdms) and the computed simulation results were presented. the eigenvalue and eigenfunction of this two-dimension waveguide were obtained and the dependence of the confinement factor and beam divergence angles in the direction of parallel and perpendicular to the pn junction on the structure parameters such as the number of quantum wells, the al composition of the cladding layers, the ridge width, the waveguide thickness and the residual thickness of the upper p-cladding layer were investigated. the results can provide optimized structure parameters and help us design and fabricate high performance algainp laser diodes with a low beam aspect ratio required for optical storage applications.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:19z (gmt). no. of bitstreams: 1 2773.pdf: 572743 bytes, checksum: 57b5a554fd63555849bb72e57f00209a (md5) previous issue date: 2004; spie.; chinese opt soc.; wuhan municipal govt.; chinese acad sci, inst semicond, beijing 100083, peoples r china |
收录类别 | CPCI-S |
会议主办者 | spie.; chinese opt soc.; wuhan municipal govt. |
会议录 | apoc 2003:asia-pacific optical and wireless communications; materials, active devices, and optical amplifiers, pts 1 and 2, 5280 |
会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
学科主题 | 光电子学 |
语种 | 英语 |
ISSN号 | 0277-786x |
ISBN号 | 0-8194-5175-4 |
内容类型 | 会议论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/13579] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Xu Y,Zhu XP,Ye XJ,et al. Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure[C]. 见:asia-pacific optical and wireless communications conference (apoc 2003). wuhan, peoples r china. nov 04-06, 2003. |
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