Reactant-governing growth direction of indium nitride nanowires

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	Reactant-governing growth direction of indium nitride nanowires
	Shi L
刊名	Nanotechnology
	2010-06
期号	24
通讯作者	Liu, H
合作状况	其它
英文摘要	Hexagonal wurtzite InN nanowires are grown via a vapor-liquid-solid (VLS) mechanism with an Au catalyst. Microstructure characterizations of a large number of nanowires demonstrate that the growth direction of InN nanowires is governed by variable NH(3) flux. InN nanowires at a NH(3) flux of 10 standard cubic centimeters per minute (sccm) grow preferentially in a hexagonal close-packed (hcp) < 10 (1) over bar0 > direction, while those at 100 sccm NH(3) flux favor the hcp < 0001 > direction. A free energy minimization model is proposed to interpret this phenomenon. The first-principles calculations reveal that the < 10 (1) over bar0 > oriented nucleus has the lowest energy at the lower NH(3) flux. In contrast, when NH(3) flux is high, the < 0001 > oriented nucleus has the lowest energy.
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000278026300016
公开日期	2010-12-13
内容类型	期刊论文
源URL	[http://58.210.77.100/handle/332007/262]
专题	苏州纳米技术与纳米仿生研究所_纳米生物医学与安全研究部_程国胜团队
推荐引用方式 GB/T 7714	Shi L. Reactant-governing growth direction of indium nitride nanowires[J]. Nanotechnology,2010(24).
APA	Shi L.(2010).Reactant-governing growth direction of indium nitride nanowires.Nanotechnology(24).
MLA	Shi L."Reactant-governing growth direction of indium nitride nanowires".Nanotechnology .24(2010).