Fabrication and Characterization of a Single Electron Transistor Based on a Silicon-on-Insulator

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	Fabrication and Characterization of a Single Electron Transistor Based on a Silicon-on-Insulator
	Su, LN(苏丽娜); Lv, L(吕利); Li, XX(李欣幸); Qin, H(秦华); Gu, XF
刊名	CHINESE PHYSICS LETTERS
	2015
卷号	32 期号:4 页码:3
通讯作者	Gu, XF
英文摘要	A single electron transistor based on a silicon-on-insulator is successfully fabricated with electron-beam nano-lithography, inductively coupled plasma etching, thermal oxidation and other techniques. The unique design of the pattern inversion is used, and the pattern is transferred to be negative in the electron-beam lithography step. The oxidation process is used to form the silicon oxide tunneling barriers, and to further reduce the effective size of the quantum dot. Combinations of these methods offer advantages of good size controllability and accuracy, high reproducibility, low cost, large-area contacts, allowing batch fabrication of single electron transistors and good integration with a radio-frequency tank circuit. The fabricated single electron transistor with a quantum dot about 50 nm in diameter is demonstrated to operate at temperatures up to 70 K. The charging energy of the Coulomb island is about 12.5 meV.
收录类别	SCI
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/3397]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_秦华团队
推荐引用方式 GB/T 7714	Su, LN,Lv, L,Li, XX,et al. Fabrication and Characterization of a Single Electron Transistor Based on a Silicon-on-Insulator[J]. CHINESE PHYSICS LETTERS,2015,32(4):3.
APA	Su, LN,Lv, L,Li, XX,Qin, H,&Gu, XF.(2015).Fabrication and Characterization of a Single Electron Transistor Based on a Silicon-on-Insulator.CHINESE PHYSICS LETTERS,32(4),3.
MLA	Su, LN,et al."Fabrication and Characterization of a Single Electron Transistor Based on a Silicon-on-Insulator".CHINESE PHYSICS LETTERS 32.4(2015):3.