Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 刘建平团队

	Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage
	Shi, M; Chen, P; Zhao, DG; Jiang, DS; Zheng, J; Cheng, BW; Zhu, JJ; Liu, ZS; Liu, W; Li, X
刊名	CHINESE PHYSICS B
	2015
卷号	24 期号:5 页码:5
关键词	AlN field emission cold cathode negative electron affinity
通讯作者	Zhao, DG
英文摘要	The field emission characteristics of the AlN thin films with micro-scaled cold cathode structures are tested in the high vacuum system. The aluminum nitride (AlN) thin films with a thickness of about 100 nm are prepared on the n-type 6H-SiC (0001) substrate at 1100 degrees C by metal organic chemical vapor deposition (MOCVD) under low pressure. The I-V curves and surface micro-images of undoped and Si-doped AlN films are investigated. From the I-V and Fowler-Nordheim plots, it can be seen that the Si-doped AlN shows better field emission characteristics compared with the undoped AlN sample. The obtained turn-on field is 6.7 V/mu m and the maximum emission current density is 154 mA/cm(2) at 69.3 V for the Si-doped AlN film cathode after proper surface treatment. It is proposed that the relatively low electric resistivity of Si-doped AlN films is significant for electron migration to the surface region, and their rougher surface morphology is beneficial to a higher local electric field enhancement for the field emission.
收录类别	SCI
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/3378]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Shi, M,Chen, P,Zhao, DG,et al. Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage[J]. CHINESE PHYSICS B,2015,24(5):5.
APA	Shi, M.,Chen, P.,Zhao, DG.,Jiang, DS.,Zheng, J.,...&Yang, H.(2015).Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage.CHINESE PHYSICS B,24(5),5.
MLA	Shi, M,et al."Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage".CHINESE PHYSICS B 24.5(2015):5.