Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 刘建平团队

	Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet
	Li DY(李德尧); Wang HB(王怀兵); Liu JP(刘建平); Zhang SM(张书明)
刊名	CHINESE SCIENCE BULLETIN
	2014-06
卷号	59 期号:16 页码:1903-1906
关键词	InGaN Superluminescent diodes Gain saturation
通讯作者	张书明
英文摘要	We have fabricated InGaN-based superluminescent diodes (SLDs) with one-sided oblique facet. The characteristics of the SLDs and laser diodes with the same cavity length (800 mu m) were compared. The typical peak wavelength and the full width at half maximum of the spectrum in superluminescence regime are 445.3 and 7.7 nm for the SLDs with 800 mu m cavity length. The characteristics of the SLDs with different cavity length were also demonstrated in a comparative way. It is found that the gain of the InGaN multi-quantum wells in blue spectral range is a linear function of the current density below gain saturation region. The lasing threshold current turns out to be higher for the shorter SLD (S-SLD) (400 mu m), but the output light intensity of the longer SLD (800 mu m) is higher than that of the S-SLD under the same current density. The gain saturation phenomenon was observed in S-SLD when it was biased at a current density larger than 27.5 kA/cm(2). The increase of junction temperature was identified as the main reason for gain saturation through spectra analysis.
收录类别	SCI
语种	英语
WOS记录号	WOS:000335658800018
公开日期	2014-12-08
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/1666]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Li DY,Wang HB,Liu JP,et al. Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet[J]. CHINESE SCIENCE BULLETIN,2014,59(16):1903-1906.
APA	Li DY,Wang HB,Liu JP,&Zhang SM.(2014).Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet.CHINESE SCIENCE BULLETIN,59(16),1903-1906.
MLA	Li DY,et al."Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet".CHINESE SCIENCE BULLETIN 59.16(2014):1903-1906.