Improved Hole Transport by p-InxGa1-xN Layer in Multiple Quantum Wells of Visible LEDs

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	Improved Hole Transport by p-InxGa1-xN Layer in Multiple Quantum Wells of Visible LEDs
	Liu, JP(刘建平)
刊名	IEEE PHOTONICS TECHNOLOGY LETTERS
	2013-09-15
卷号	25 期号:18 页码:1789-1792
关键词	Epitaxial growth light emitting diodes luminescence
通讯作者	Kim, J
英文摘要	Studied is the effect of indium (In) mole fraction in p-InxGa(1-x)N: Mg layers with 0 <= x(In) <= 0.035 on hole injection and transport behaviors in InGaN/GaN multiple quantum wells (MQWs) using dual-wavelength and triple-wavelength active regions. Electro-optical characteristics of light-emitting diodes containing p-layers with different In content and with silicon doping in selected QW barriers (QWBs) are compared to evaluate hole transport in the active region. The results show that enhanced hole transport and corresponding more uniform distribution of holes across the MQW region are achieved by increasing x(In) in the p-InxGa1-xN:Mg layer, possibly due to modification in energy of holes by a potential barrier between the p-InGaN and GaN QWB.
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000323842700003
公开日期	2014-01-13
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/1331]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Liu, JP. Improved Hole Transport by p-InxGa1-xN Layer in Multiple Quantum Wells of Visible LEDs[J]. IEEE PHOTONICS TECHNOLOGY LETTERS,2013,25(18):1789-1792.
APA	Liu, JP.(2013).Improved Hole Transport by p-InxGa1-xN Layer in Multiple Quantum Wells of Visible LEDs.IEEE PHOTONICS TECHNOLOGY LETTERS,25(18),1789-1792.
MLA	Liu, JP."Improved Hole Transport by p-InxGa1-xN Layer in Multiple Quantum Wells of Visible LEDs".IEEE PHOTONICS TECHNOLOGY LETTERS 25.18(2013):1789-1792.