Photovoltaic Effects of InGaN/GaN Double Heterojunctions With p-GaN Nanorod Arrays

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	Photovoltaic Effects of InGaN/GaN Double Heterojunctions With p-GaN Nanorod Arrays
	Dong JR (董建荣); Yang H (杨辉)
刊名	Ieee Electron Device Letters
	2010-12
卷号	31 期号:12 页码:1422-1424
合作状况	其它
英文摘要	The p-GaN/In(0.06)Ga(0.94)N/n-GaN double hetero-junctional solar cells with solely formed nanorod arrays of p-GaN have been fabricated on sapphire (0001). The p-GaN nanorod arrays are demonstrated to significantly reduce the reflectance loss of light incidence. A stress relief of the intrinsic InGaN region is observed from high-resolution X-ray diffraction analyses. The electroluminescence emission peak is blue shifted compared with the conventional solar cells. These results are reflected by the spectral dependences of the external quantum efficiency (EQE) that show a shorter cutoff wavelength response. The maximum EQE value is 55.5%, which is an enhancement of 10% as compared with the conventional devices.
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000284541400022
公开日期	2011-03-11
内容类型	期刊论文
源URL	[http://58.210.77.100/handle/332007/341]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_董建荣团队
推荐引用方式 GB/T 7714	Dong JR ,Yang H . Photovoltaic Effects of InGaN/GaN Double Heterojunctions With p-GaN Nanorod Arrays[J]. Ieee Electron Device Letters,2010,31(12):1422-1424.
APA	Dong JR ,&Yang H .(2010).Photovoltaic Effects of InGaN/GaN Double Heterojunctions With p-GaN Nanorod Arrays.Ieee Electron Device Letters,31(12),1422-1424.
MLA	Dong JR ,et al."Photovoltaic Effects of InGaN/GaN Double Heterojunctions With p-GaN Nanorod Arrays".Ieee Electron Device Letters 31.12(2010):1422-1424.