A 54-mW 8-Gbit/s VCSEL driver in a 65-nm CMOS technology

	A 54-mW 8-Gbit/s VCSEL driver in a 65-nm CMOS technology
	Liang, F; Lu, W; Chen, J; Deng, B; Gong, D; Guo, D; Jin, G; Li, X; Liang, H; Liu, C
刊名	JOURNAL OF INSTRUMENTATION
	2014
卷号	9 页码:C01021
关键词	VLSI circuits Analogue electronic circuits Front-end electronics for detector readout
英文摘要	We report a VCSEL driver ASIC designed and fabricated in a commercial 65-nm CMOS process. At 8 Gbps, the eye diagram passes the eye mask test and the bit-error-rate is less than 10(-12) at the 95% confidence level. The total power consumption (including VCSEL) is about 54mW, less than 1/4 of our previous VCSEL driver ASIC in a silicon-on-sapphire CMOS technology. The VCSEL driver has been tested in a neutron beam with the maximum energy of 800MeV and the cross section has been estimated to be less than 3.14 x 10(-11) cm(2).
学科主题	Instruments & Instrumentation
收录类别	SCI
WOS记录号	WOS:000332307000021
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/225097]
专题	高能物理研究所_实验物理中心
推荐引用方式 GB/T 7714	Liang, F,Lu, W,Chen, J,et al. A 54-mW 8-Gbit/s VCSEL driver in a 65-nm CMOS technology[J]. JOURNAL OF INSTRUMENTATION,2014,9:C01021.
APA	Liang, F.,Lu, W.,Chen, J.,Deng, B.,Gong, D.,...&王铮.(2014).A 54-mW 8-Gbit/s VCSEL driver in a 65-nm CMOS technology.JOURNAL OF INSTRUMENTATION,9,C01021.
MLA	Liang, F,et al."A 54-mW 8-Gbit/s VCSEL driver in a 65-nm CMOS technology".JOURNAL OF INSTRUMENTATION 9(2014):C01021.