Research and Development of Electronic and Optoelectronic Materials in China

	Research and Development of Electronic and Optoelectronic Materials in China
	Wang ZG(王占国)
刊名	半导体学报
	2000
卷号	21 期号:11 页码:1041
英文摘要	于2010-11-23批量导入; zhangdi于2010-11-23 13:10:40导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:10:40z (gmt). no. of bitstreams: 1 5422.pdf: 551812 bytes, checksum: 66d43088a764b61d73805f8e0250f14d (md5) previous issue date: 2000; 中科院半导体所
学科主题	半导体材料
收录类别	CSCD
语种	英语
公开日期	2010-11-23 ; 2011-04-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/18749]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang ZG. Research and Development of Electronic and Optoelectronic Materials in China[J]. 半导体学报,2000,21(11):1041.
APA	王占国.(2000).Research and Development of Electronic and Optoelectronic Materials in China.半导体学报,21(11),1041.
MLA	王占国."Research and Development of Electronic and Optoelectronic Materials in China".半导体学报 21.11(2000):1041.