Direct graphene synthesis on SiO2/Si substrate by ion implantation

	Direct graphene synthesis on SiO2/Si substrate by ion implantation
	Zhang, R; Wang, ZS; Zhang, ZD; Dai, ZG; Wang, LL; Li, H; Zhou, L; Shang, YX; He, J; Fu, DJ
刊名	APPLIED PHYSICS LETTERS
	2013
卷号	102 期号:19 页码:193102
英文摘要	We present results of few-layer graphene synthesis directly on SiO2/Si substrate by negative carbon ion implantation in Ni catalyst films on the top of SiO2/Si substrate. Negative carbon ions at 20 keV were implanted into Ni films with doses of (4-16) x 10(15) cm(-2). The implanted carbon atoms dissolved in Ni at an elevated temperature and diffused towards both sides of the Ni film. After annealing, graphene layers were observed on top of the Ni surface and on SiO2 beneath the Ni film. Formation of graphene layers directly on insulating substrates was achieved by etching the top Ni layer. (C) 2013 AIP Publishing LLC.
学科主题	Physics
收录类别	SCI
WOS记录号	WOS:000320440800081
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/224669]
专题	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Zhang, R,Wang, ZS,Zhang, ZD,et al. Direct graphene synthesis on SiO2/Si substrate by ion implantation[J]. APPLIED PHYSICS LETTERS,2013,102(19):193102.
APA	Zhang, R.,Wang, ZS.,Zhang, ZD.,Dai, ZG.,Wang, LL.,...&Liu, JR；何俊.(2013).Direct graphene synthesis on SiO2/Si substrate by ion implantation.APPLIED PHYSICS LETTERS,102(19),193102.
MLA	Zhang, R,et al."Direct graphene synthesis on SiO2/Si substrate by ion implantation".APPLIED PHYSICS LETTERS 102.19(2013):193102.