Improving Room-Temperature Ferromagnetism in Mn-Implanted Si by High-Temperature Annealing

	Improving Room-Temperature Ferromagnetism in Mn-Implanted Si by High-Temperature Annealing
	Li, TC; Liu, CX; Chen, JH; Peng, GL; Luo, FF; Wen, W; Zhang, J; Guo, LP; Zhang J(张静)
刊名	IEEE TRANSACTIONS ON MAGNETICS
	2015
卷号	51 期号:6 页码:2400204
关键词	Diluted magnetic semiconductors (DMSs) Mn-implanted Si room-temperature ferromagnetism short-range spin correlation
英文摘要	Mn-implanted Si with postannealing treatment at 873, 973, 1073, and 1173 K exhibited ferromagnetism at room temperature. Ferromagnetism was enhanced as the annealing temperature increased. The largest value of saturation magnetization was found in the sample annealed at 1173 K. X-ray absorption near-edge structure spectra showed no formation of substitutional-interstitial Mn-Mn dimmers in all samples. On the other hand, high-resolution transmission electron microscopy and glancing incidence X-ray diffraction revealed a variety of MnSi compounds. We propose that the ferromagnetism has the origin from the MnSi1.7 nanoparticles as well as the MnSi 1:1 phase, which possesses strong short-range spin correlation. The formation of antiferromagnetic Mn5Si3 compound in 873 and 973 K annealed samples substantially reduced the magnetism. This paper provides new insights into the understanding of ferromagnetism in Mn-implanted Si diluted magnetic semiconductors.
学科主题	Engineering; Physics
类目[WOS]	Engineering, Electrical & Electronic ; Physics, Applied
收录类别	SCI ; EI
WOS记录号	WOS:000356516600004
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/228417]
专题	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Li, TC,Liu, CX,Chen, JH,et al. Improving Room-Temperature Ferromagnetism in Mn-Implanted Si by High-Temperature Annealing[J]. IEEE TRANSACTIONS ON MAGNETICS,2015,51(6):2400204.
APA	Li, TC.,Liu, CX.,Chen, JH.,Peng, GL.,Luo, FF.,...&张静.(2015).Improving Room-Temperature Ferromagnetism in Mn-Implanted Si by High-Temperature Annealing.IEEE TRANSACTIONS ON MAGNETICS,51(6),2400204.
MLA	Li, TC,et al."Improving Room-Temperature Ferromagnetism in Mn-Implanted Si by High-Temperature Annealing".IEEE TRANSACTIONS ON MAGNETICS 51.6(2015):2400204.