A novel porous substrate for the growth of high quality GaN crystals by HVPE

	A novel porous substrate for the growth of high quality GaN crystals by HVPE
	Dai, YB; Wu, YZ; Zhang, L; Shao, YL; Tian, Y; Huo, Q; Zhang, P; Cao, XZ; Hao, XP;张鹏(正); Cao XZ(曹兴忠)
刊名	RSC ADVANCES
	2014
卷号	4 期号:66 页码:35106-35111
英文摘要	An original high temperature annealing (HTA) technology has been established to fabricate a porous substrate with a layer of inverted pyramid structures. The details about the formation of the porous substrate and the related mechanism were discussed. It was proved that the porous structures were formed through an etching-like mechanism assisted by SiO2 patterned masks. High-quality GaN crystals have been prepared using the as-prepared porous substrate. The growth experiments demonstrated that such porous substrates were mechanically fragile. The porous structures are suitable to be used as a release layer for the growth of GaN crystals with low stress and defect density.
学科主题	Chemistry
收录类别	SCI
WOS记录号	WOS:000341287700049
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/225351]
专题	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Dai, YB,Wu, YZ,Zhang, L,et al. A novel porous substrate for the growth of high quality GaN crystals by HVPE[J]. RSC ADVANCES,2014,4(66):35106-35111.
APA	Dai, YB.,Wu, YZ.,Zhang, L.,Shao, YL.,Tian, Y.,...&曹兴忠.(2014).A novel porous substrate for the growth of high quality GaN crystals by HVPE.RSC ADVANCES,4(66),35106-35111.
MLA	Dai, YB,et al."A novel porous substrate for the growth of high quality GaN crystals by HVPE".RSC ADVANCES 4.66(2014):35106-35111.