A novel organic electrical memory device based on the metallofullerene-grafted polymer (Gd@C-82-PVK)

	A novel organic electrical memory device based on the metallofullerene-grafted polymer (Gd@C-82-PVK)
	Yue, DM; Cui, RL; Ruan, XL; Huang, H; Guo, XH; Wang, ZZ; Gao, XF; Yang, SY; Dong, JQ; Yi, FT
刊名	ORGANIC ELECTRONICS
	2014
卷号	15 期号:12 页码:3482-3486
关键词	Metallofullerene Nanoparticle PVK Organic memory DFT calculation Charge transfer
英文摘要	The ITO/Gd@C-82-PVK/Al sandwich nonvolatile memory device was developed based on polymer containing carbazole moieties as electron donors and Gd@C-82 as electron acceptors for the first time. The results of I-V characteristic test indicated that the new material exhibited typical bistable electrical switching and a nonvolatile rewritable memory effect, with a turn-on voltage of about -1.5 V and an ON/OFF-state current ratio of more than 10(4). We propose that such a low turn-on voltage is caused due to the encaged metal and the DFT calculation indicated that the encaged metal served as an important electron trapping center, which facilitated the arrival of turn-on voltage. (C) 2014 Elsevier B.V. All rights reserved.
学科主题	Materials Science; Physics
收录类别	SCI
WOS记录号	WOS:000345649200010
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/225241]
专题	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Yue, DM,Cui, RL,Ruan, XL,et al. A novel organic electrical memory device based on the metallofullerene-grafted polymer (Gd@C-82-PVK)[J]. ORGANIC ELECTRONICS,2014,15(12):3482-3486.
APA	Yue, DM.,Cui, RL.,Ruan, XL.,Huang, H.,Guo, XH.,...&孙宝云.(2014).A novel organic electrical memory device based on the metallofullerene-grafted polymer (Gd@C-82-PVK).ORGANIC ELECTRONICS,15(12),3482-3486.
MLA	Yue, DM,et al."A novel organic electrical memory device based on the metallofullerene-grafted polymer (Gd@C-82-PVK)".ORGANIC ELECTRONICS 15.12(2014):3482-3486.