Mechanism of magnetoresistance ratio enhancement in MgO/NiFe/MgO heterostructure by rapid thermal annealing

	Mechanism of magnetoresistance ratio enhancement in MgO/NiFe/MgO heterostructure by rapid thermal annealing
	Zhao, CJ; Liu, Y; Zhang, JY; Sun, L; Ding, L; Zhang, P; Wang, BY; Cao, XZ; Yu, GH;张鹏(正); Wang BY(王宝义)
刊名	APPLIED PHYSICS LETTERS
	2012
卷号	101 期号:7 页码:72404
英文摘要	To reveal thermal effects on the film quality/microstructure evolution and the resulted magnetoresistance (MR) ratio in MgO/NiFe/MgO heterostructures, positron annihilation spectroscopy studies have been performed. It is found that the ionic interstitials in the MgO layers recombine with the nearby vacancies at lower annealing temperatures (200-300 degrees C) and lead to a slow increase in sample MR. Meanwhile, vacancy defects agglomeration/removal and ordering acceleration in MgO will occur at higher annealing temperatures (450-550 degrees C) and the improved MgO and MgO/NiFe interfaces microstructure are responsible for the observed significant MR enhancement. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745916]
学科主题	Physics
收录类别	SCI
WOS记录号	WOS:000308263100039
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/224573]
专题	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Zhao, CJ,Liu, Y,Zhang, JY,et al. Mechanism of magnetoresistance ratio enhancement in MgO/NiFe/MgO heterostructure by rapid thermal annealing[J]. APPLIED PHYSICS LETTERS,2012,101(7):72404.
APA	Zhao, CJ.,Liu, Y.,Zhang, JY.,Sun, L.,Ding, L.,...&曹兴忠.(2012).Mechanism of magnetoresistance ratio enhancement in MgO/NiFe/MgO heterostructure by rapid thermal annealing.APPLIED PHYSICS LETTERS,101(7),72404.
MLA	Zhao, CJ,et al."Mechanism of magnetoresistance ratio enhancement in MgO/NiFe/MgO heterostructure by rapid thermal annealing".APPLIED PHYSICS LETTERS 101.7(2012):72404.