Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

	Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition
	Zhao, DG; Jiang, DS; Le, LC; Wu, LL; Li, L; Zhu, JJ; Wang, H; Liu, ZS; Zhang, SM; Jia, QJ
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2012
卷号	540 页码:46-48
关键词	Nitride materials Crystal growth X-ray diffraction
英文摘要	The growth parameters which can modify In incorporation and affect electroluminescence (EL) properties of blue-violet InGaN/GaN multiple quantum wells (MQWs) during metalorganic chemical vapor deposition (MOCVD) are investigated. It is found that a suitable increase of trimethylindium (TMIn) flux during the growth of InGaN well can increase both EL intensity and EL peak wavelength. However, when the growth temperature of well decreases from 810 to 800 degrees C, the EL intensity decreases although the EL peak wavelength increases. X-ray diffraction results demonstrate that the interface roughness plays an important role in determining the EL intensity of InGaN/GaN MQWs. It is suggested to grow blue-violet MQWs with high structural quality by suitably increasing the TMIn flux and at a relatively high growth temperature. (C) 2012 Elsevier B.V. All rights reserved.
学科主题	Chemistry; Materials Science; Metallurgy & Metallurgical Engineering
收录类别	SCI
WOS记录号	WOS:000308068700009
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/223791]
专题	高能物理研究所_多学科研究中心
推荐引用方式 GB/T 7714	Zhao, DG,Jiang, DS,Le, LC,et al. Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2012,540:46-48.
APA	Zhao, DG.,Jiang, DS.,Le, LC.,Wu, LL.,Li, L.,...&贾全杰.(2012).Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition.JOURNAL OF ALLOYS AND COMPOUNDS,540,46-48.
MLA	Zhao, DG,et al."Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition".JOURNAL OF ALLOYS AND COMPOUNDS 540(2012):46-48.