Growth of Cubic GaN by MOCVD at High Temperature

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	Growth of Cubic GaN by MOCVD at High Temperature
	Fu Yi ; Sun Yuanping ; Shen Xiaoming ; Li Shunfeng ; Feng Zhihong ; Duan Lihong ; Wang Hai ; Yang Hui
刊名	半导体学报
	2002
卷号	23 期号:2 页码:120-123
中文摘要	high quality cubic gan (c-gan) is grown by metalorganic vapor deposition (mocvd) at an increased growth temperature of 900 ℃, with the growth rate of 1.6 μm/h. the full width at half maximum (fwhm) of room temperature photoluminescence (pl) for the high temperature grown gan film is 48mev. it is smaller than that of the sample grown at 830 ℃. in x-ray diffraction (xrd) measurement, the high temperature grown gan shows a (002) peak at 20° with a fwhm of 21'. it can be concluded that, although c-gan is of metastable phase, high growth temperature is still beneficial to the improvement in its crystal quality. the relationship between the growth rate and growth temperature is also discussed.
英文摘要	high quality cubic gan (c-gan) is grown by metalorganic vapor deposition (mocvd) at an increased growth temperature of 900 ℃, with the growth rate of 1.6 μm/h. the full width at half maximum (fwhm) of room temperature photoluminescence (pl) for the high temperature grown gan film is 48mev. it is smaller than that of the sample grown at 830 ℃. in x-ray diffraction (xrd) measurement, the high temperature grown gan shows a (002) peak at 20° with a fwhm of 21'. it can be concluded that, although c-gan is of metastable phase, high growth temperature is still beneficial to the improvement in its crystal quality. the relationship between the growth rate and growth temperature is also discussed.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:08:32导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:08:32z (gmt). no. of bitstreams: 1 5115.pdf: 319606 bytes, checksum: 7eec57fd9c688361749e9eef7f2fcdca (md5) previous issue date: 2002; 国家自然科学基金; institute of semiconductors, the chinese academy of sciences
学科主题	光电子学
收录类别	CSCD
资助信息	国家自然科学基金
语种	英语
公开日期	2010-11-23 ; 2011-04-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/18137]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Fu Yi,Sun Yuanping,Shen Xiaoming,et al. Growth of Cubic GaN by MOCVD at High Temperature[J]. 半导体学报,2002,23(2):120-123.
APA	Fu Yi.,Sun Yuanping.,Shen Xiaoming.,Li Shunfeng.,Feng Zhihong.,...&Yang Hui.(2002).Growth of Cubic GaN by MOCVD at High Temperature.半导体学报,23(2),120-123.
MLA	Fu Yi,et al."Growth of Cubic GaN by MOCVD at High Temperature".半导体学报 23.2(2002):120-123.