1.5μm Self-Aligned Spotsize Converter Integrated DFB Fabricated by Selective Area Grown MOVPE

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	1.5μm Self-Aligned Spotsize Converter Integrated DFB Fabricated by Selective Area Grown MOVPE
	Wang Wei; Wang Wei
刊名	半导体学报
	2002
卷号	23 期号:7 页码:681-684
中文摘要	High performance 1.57μm spotsize converter monolithically integrated DFB is fabricated by the technique of self-aligned selective area growth. The upper optical confinement layer and the butt-coupled tapered thickness waveguide are regrown simultaneously, which not only offeres the separated optimization of the active region and the integrated spotsize converter, but also reduces the difficulty of the butt-joint selective regrowth. The threshold current is as low as 4.4mA. The output power at 49mA is 10.1mW. The side mode suppression ratio (SMSR) is 33.2dB. The vertical and horizontal far field divergence angles are as small as 9° and 15° respectively, the 1dB misalignment tolerance are 3.6μm and 3.4μm.
学科主题	半导体材料
收录类别	CSCD
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/18079]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang Wei,Wang Wei. 1.5μm Self-Aligned Spotsize Converter Integrated DFB Fabricated by Selective Area Grown MOVPE[J]. 半导体学报,2002,23(7):681-684.
APA	Wang Wei,&Wang Wei.(2002).1.5μm Self-Aligned Spotsize Converter Integrated DFB Fabricated by Selective Area Grown MOVPE.半导体学报,23(7),681-684.
MLA	Wang Wei,et al."1.5μm Self-Aligned Spotsize Converter Integrated DFB Fabricated by Selective Area Grown MOVPE".半导体学报 23.7(2002):681-684.