| Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes | |
| Panpan Li ; Hongjian Li ; Zhi Li ; Junjie Kang ; Xiaoyan Yi ; Jinmin Li ; Guohong Wang | |
| 刊名 | journal of applied physics
 |
| 2015 | |
| 卷号 | 117页码:073101 |
| 学科主题 | 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2016-04-15 |
| 内容类型 | 期刊论文 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/27000]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Panpan Li,Hongjian Li,Zhi Li,et al. Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes[J]. journal of applied physics,2015,117:073101. |
| APA | Panpan Li.,Hongjian Li.,Zhi Li.,Junjie Kang.,Xiaoyan Yi.,...&Guohong Wang.(2015).Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes.journal of applied physics,117,073101. |
| MLA | Panpan Li,et al."Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes".journal of applied physics 117(2015):073101. |
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