Surface Evolution of Nano-Textured 4H-SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth

	Surface Evolution of Nano-Textured 4H-SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth
	Xingfang Liu ; Yu Chen ; Changzheng Sun ; Min Guan ; Yang Zhang ; Feng Zhang ; Guosheng Sun ; Yiping Zeng
刊名	nanomaterials
	2015
卷号	5 期号:3 页码:1532-1543
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2016-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26849]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Xingfang Liu,Yu Chen,Changzheng Sun,et al. Surface Evolution of Nano-Textured 4H-SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth[J]. nanomaterials,2015,5(3):1532-1543.
APA	Xingfang Liu.,Yu Chen.,Changzheng Sun.,Min Guan.,Yang Zhang.,...&Yiping Zeng.(2015).Surface Evolution of Nano-Textured 4H-SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth.nanomaterials,5(3),1532-1543.
MLA	Xingfang Liu,et al."Surface Evolution of Nano-Textured 4H-SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth".nanomaterials 5.3(2015):1532-1543.