Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition

	Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition
	Junyan Jiang ; Yuantao Zhang ; Fan Yang ; Zhen Huang ; Long Yan ; Pengchong Li ; Chen Chi ; Degang Zhao ; Baolin Zhang ; Guotong Du
刊名	vacuum
	2015
卷号	119 期号:2015 页码:63e67
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2016-03-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26762]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Junyan Jiang,Yuantao Zhang,Fan Yang,et al. Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition[J]. vacuum,2015,119(2015):63e67.
APA	Junyan Jiang.,Yuantao Zhang.,Fan Yang.,Zhen Huang.,Long Yan.,...&Guotong Du.(2015).Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition.vacuum,119(2015),63e67.
MLA	Junyan Jiang,et al."Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition".vacuum 119.2015(2015):63e67.