Improving the Field-Effect Performance of Bi2S3 Single Nanowires by an Asymmetric Device Fabrication

	Improving the Field-Effect Performance of Bi2S3 Single Nanowires by an Asymmetric Device Fabrication
	Fangyuan Lu ; Renxiong Li ; Yan Li ; Nengjie Huo ; Juehan Yang ; Yongtao Li ; Bo Li ; Shengxue Yang ; Zhongming Wei ; Jingbo Li
刊名	chemphyschem
	2015
卷号	16 期号:1 页码:99-103
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2016-03-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26758]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Fangyuan Lu,Renxiong Li,Yan Li,et al. Improving the Field-Effect Performance of Bi2S3 Single Nanowires by an Asymmetric Device Fabrication[J]. chemphyschem,2015,16(1):99-103.
APA	Fangyuan Lu.,Renxiong Li.,Yan Li.,Nengjie Huo.,Juehan Yang.,...&Jingbo Li.(2015).Improving the Field-Effect Performance of Bi2S3 Single Nanowires by an Asymmetric Device Fabrication.chemphyschem,16(1),99-103.
MLA	Fangyuan Lu,et al."Improving the Field-Effect Performance of Bi2S3 Single Nanowires by an Asymmetric Device Fabrication".chemphyschem 16.1(2015):99-103.