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	Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates
	XiaoyeWang ; WennaDu ; XiaoguangYang ; XingwangZhang ; TaoYang
刊名	journal of crystal growth
	2015
卷号	426页码:287–292
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2016-03-22
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26724]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	XiaoyeWang,WennaDu,XiaoguangYang,et al. Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates[J]. journal of crystal growth,2015,426:287–292.
APA	XiaoyeWang,WennaDu,XiaoguangYang,XingwangZhang,&TaoYang.(2015).Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates.journal of crystal growth,426,287–292.
MLA	XiaoyeWang,et al."Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates".journal of crystal growth 426(2015):287–292.

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