Inhibitation of Si-Ge interdiffusion in Ge-on-insulator structures formed by rapid melt growth

	Inhibitation of Si-Ge interdiffusion in Ge-on-insulator structures formed by rapid melt growth
	J.J.Wen ; Z. Liu ; T.W. Zhou ; C.L. Xue ; Y.H. Zuo ; C.B. Li ; Q.M. Wang ; B.W. Cheng
刊名	thin solid films
	2015
卷号	586 页码:54-57
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2016-03-22
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26646]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	J.J.Wen,Z. Liu,T.W. Zhou,et al. Inhibitation of Si-Ge interdiffusion in Ge-on-insulator structures formed by rapid melt growth[J]. thin solid films,2015,586:54-57.
APA	J.J.Wen.,Z. Liu.,T.W. Zhou.,C.L. Xue.,Y.H. Zuo.,...&B.W. Cheng.(2015).Inhibitation of Si-Ge interdiffusion in Ge-on-insulator structures formed by rapid melt growth.thin solid films,586,54-57.
MLA	J.J.Wen,et al."Inhibitation of Si-Ge interdiffusion in Ge-on-insulator structures formed by rapid melt growth".thin solid films 586(2015):54-57.