Structural Dependences of Localization and Recombination of Photogenerated Carriers in the top GaInP Subcells of GaInP/GaAs Double-Junction Tandem Solar Cells

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	Structural Dependences of Localization and Recombination of Photogenerated Carriers in the top GaInP Subcells of GaInP/GaAs Double-Junction Tandem Solar Cells
	Deng, Z; Ning, JQ(宁吉强); Su, ZC; Xu, SJ; Xing, Z(邢政); Wang, RX(王荣新); Lu, SL(陆书龙); Dong, JR(董建荣); Zhang, BS(张宝顺); Yang, H(杨辉)
刊名	ACS APPLIED MATERIALS & INTERFACES
	2015
卷号	7 期号:1 页码:6
关键词	GaInP/GaAs double-junction tandem solar cells photoluminescence localization mechanism radiative recombination
通讯作者	Xu, SJ
英文摘要	In high-efficiency GaInP/GaAs double-junction tandem solar cells, GaInP layers play a central role in determining the performance of the solar cells. Therefore, gaining a deeper understanding of the optoelectronic processes in GaInP layers is crucial for improving the energy conversion efficiency of GaInP-based photovoltaic devices. In this work, we firmly show strong dependences of localization and recombination of photogenerated carriers in the top GaInP subcells in the GaInP/GaAs double-junction tandem solar cells on the substrate misorientation angle with excitation intensity- and temperature-dependent photoluminescence (PL). The entire solar cell structures including GaInP layers were grown with metalorganic chemical vapor deposition on GaAs substrates with misorientation angles of 2 degrees (denoted as Sample 2 degrees) and 7 degrees (Sample 7 degrees) off (100) toward (111)B. The PL spectral features of the two top GaInP subcells, as well as their excitation-power and temperature dependences exhibit remarkable variation on the misorientation angle. In Sample 2 degrees, the dominant localization mechanism and luminescence channels are due to the energy potential minima caused by highly ordered atomic domains; In Sample 7 degrees, the main localization and radiative recombination of photogenerated carriers occur in the atomically disordered regions. Our results reveal a more precise picture on the localization and recombination mechanisms of photogenerated carriers in the top GaInP subcells, which could be the crucial factors in controlling the optoelectronic efficiency of the GaInP-based multijunction photovoltaic devices.
收录类别	SCI
语种	英语
公开日期	2016-02-26
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/3446]
专题	苏州纳米技术与纳米仿生研究所_纳米加工公共平台
推荐引用方式 GB/T 7714	Deng, Z,Ning, JQ,Su, ZC,et al. Structural Dependences of Localization and Recombination of Photogenerated Carriers in the top GaInP Subcells of GaInP/GaAs Double-Junction Tandem Solar Cells[J]. ACS APPLIED MATERIALS & INTERFACES,2015,7(1):6.
APA	Deng, Z.,Ning, JQ.,Su, ZC.,Xu, SJ.,Xing, Z.,...&Yang, H.(2015).Structural Dependences of Localization and Recombination of Photogenerated Carriers in the top GaInP Subcells of GaInP/GaAs Double-Junction Tandem Solar Cells.ACS APPLIED MATERIALS & INTERFACES,7(1),6.
MLA	Deng, Z,et al."Structural Dependences of Localization and Recombination of Photogenerated Carriers in the top GaInP Subcells of GaInP/GaAs Double-Junction Tandem Solar Cells".ACS APPLIED MATERIALS & INTERFACES 7.1(2015):6.