High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing

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	High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing
	Xin Wei; Jun Wang; Jun Wang
刊名	chinese optics letters
	2006
卷号	4 期号:1 页码:27-29
中文摘要	the layer structure of gainp/algainp quantum well laser diodes (lds) was grown on gaas substrate using low-pressure metalorganic chemical vapor deposition (lp-mocvd) technique. in order to improve the catastrophic optical damage (cod) level of devices, a nonabsorbing window (naw), which was based on zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. zn diffusions were respectively carried out at 480, 500, 520, 540, and 580 celsius degree for 20 minutes. the largest energy blue shift of 189.1 mev was observed in the window regions at 580 celsius degree. when the blue shift was 24.7 mev at 480 celsius degree, the cod power for the window ld was 86.7% higher than the conventional ld.
英文摘要	the layer structure of gainp/algainp quantum well laser diodes (lds) was grown on gaas substrate using low-pressure metalorganic chemical vapor deposition (lp-mocvd) technique. in order to improve the catastrophic optical damage (cod) level of devices, a nonabsorbing window (naw), which was based on zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. zn diffusions were respectively carried out at 480, 500, 520, 540, and 580 celsius degree for 20 minutes. the largest energy blue shift of 189.1 mev was observed in the window regions at 580 celsius degree. when the blue shift was 24.7 mev at 480 celsius degree, the cod power for the window ld was 86.7% higher than the conventional ld.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:02:17导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:02:17z (gmt). no. of bitstreams: 1 4125.pdf: 257493 bytes, checksum: c152edf5540ec1a9fed683af4b1a7db4 (md5) previous issue date: 2006; the research was supported by the national natural science foundation of china; institute of semiconductors, chinese academy of sciences
学科主题	半导体器件
收录类别	CSCD
资助信息	the research was supported by the national natural science foundation of china
语种	英语
公开日期	2010-11-23 ; 2011-04-28
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/16415]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xin Wei,Jun Wang,Jun Wang. High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing[J]. chinese optics letters,2006,4(1):27-29.
APA	Xin Wei,Jun Wang,&Jun Wang.(2006).High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing.chinese optics letters,4(1),27-29.
MLA	Xin Wei,et al."High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing".chinese optics letters 4.1(2006):27-29.