A Multi-Finger Si_(1-x)Ge_x/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications

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	A Multi-Finger Si_(1-x)Ge_x/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications
	Cheng Buwen; Xue Chunlai
刊名	半导体学报
	2007
卷号	28 期号:4 页码:496-499
中文摘要	a large area multi-finger configuration power sige hbt device(with an emitter area of about 880μm~2)was fabricated with 2μm double-mesa technology.the maximum dc current gain β is 214.the bv_(ceo) is up to 10v,and the bv_(cbo) is up to 16v with a collector doping concentration of 1×10~(17)cm~(-3) and collector thickness of 400nm.the device exhibits a maximum oscillation frequency f_(max) of 19.3ghz and a cut-off frequency f_t of 18.0ghz at a dc bias point of i_c=30ma and v_(ce)=3v.msg(maximum stable gain)is 24.5db,and u(mason unilateral gain)is 26.6db at 1ghz.due to the novel distribution layout,no notable current gain fall-off or thermal effects are observed in the i-v characteristics at high collector current.
英文摘要	a large area multi-finger configuration power sige hbt device(with an emitter area of about 880μm~2)was fabricated with 2μm double-mesa technology.the maximum dc current gain β is 214.the bv_(ceo) is up to 10v,and the bv_(cbo) is up to 16v with a collector doping concentration of 1×10~(17)cm~(-3) and collector thickness of 400nm.the device exhibits a maximum oscillation frequency f_(max) of 19.3ghz and a cut-off frequency f_t of 18.0ghz at a dc bias point of i_c=30ma and v_(ce)=3v.msg(maximum stable gain)is 24.5db,and u(mason unilateral gain)is 26.6db at 1ghz.due to the novel distribution layout,no notable current gain fall-off or thermal effects are observed in the i-v characteristics at high collector current.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:01:51导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:01:51z (gmt). no. of bitstreams: 1 4074.pdf: 484646 bytes, checksum: 79fb1c1f057a9aefe767740a3ed387e5 (md5) previous issue date: 2007; 国家高技术研究发展计划,国家基础研究重大项目,国家自然科学基金资助项目; institute of semiconductors, chinese academy of sciences
学科主题	光电子学
收录类别	CSCD
资助信息	国家高技术研究发展计划,国家基础研究重大项目,国家自然科学基金资助项目
语种	英语
公开日期	2010-11-23 ; 2011-04-28
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/16321]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Cheng Buwen,Xue Chunlai. A Multi-Finger Si_(1-x)Ge_x/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications[J]. 半导体学报,2007,28(4):496-499.
APA	Cheng Buwen,&Xue Chunlai.(2007).A Multi-Finger Si_(1-x)Ge_x/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications.半导体学报,28(4),496-499.
MLA	Cheng Buwen,et al."A Multi-Finger Si_(1-x)Ge_x/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications".半导体学报 28.4(2007):496-499.