Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography

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	Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography
	Zhang Yang; Yang Xiang; Han Weihua
刊名	半导体学报
	2008
卷号	29 期号:6 页码:1057-1061
中文摘要	silicon crystal-facet-dependent nanostructures have been successfully fabricated on a (100)-oriented silicon-on-insulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique. this technique takes ad-vantage of the large difference in etching properties for different crystallographic planes in alkaline solution. the mini-mum size of the trapezoidal top for those si nanostructures can be reduced to less than 10nm. scanning electron microscopy(sem) and atomic force microscopy (afm) observations indicate that the etched nanostructures have controllable shapes and smooth surfaces.
学科主题	微电子学
收录类别	CSCD
资助信息	国家自然科学基金(批准号:6 5 6 17,6 776 59),国家高技术研究发展计划(批准号:2 7aa 323 3)资助项目
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/16041]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang Yang,Yang Xiang,Han Weihua. Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography[J]. 半导体学报,2008,29(6):1057-1061.
APA	Zhang Yang,Yang Xiang,&Han Weihua.(2008).Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography.半导体学报,29(6),1057-1061.
MLA	Zhang Yang,et al."Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography".半导体学报 29.6(2008):1057-1061.