A Planar InGaAs/InP Geiger Mode Avalanche Photodiode  with Cascade Edge Breakdown Suppression

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	A Planar InGaAs/InP Geiger Mode Avalanche Photodiode with Cascade Edge Breakdown Suppression
	Wu Meng
刊名	半导体学报
	2008
卷号	29 期号:9 页码:1686-1691
中文摘要	a geiger mode planar ingaas/inp avalanche photodiode （apd） with a cascade peripheral junction structure to suppress edge breakdowns is designed by finite-element analysis. the photodiode breakdown voltage is reduced to 54.3v by controlling the central junction depth, while the electric field distribution along the device central axis is controlled by adjusting doping level and thickness of the lnp field control layer. using a cascade junction structure at the periphery of the active area, premature edge breakdowns are effectively suppressed. the simulations show that the quadra-cascade structure is a good trade-off between suppression performance and fabrication complexity, with a reduced peak electric field of 5.2 × 10~5 kv/cm and a maximum hole ionization integral of 1. 201. work presented in this paper provides an effective way to design high performance photon counting ingaas/inp avalanche photodiodes.
学科主题	半导体材料
收录类别	CSCD
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15957]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wu Meng. A Planar InGaAs/InP Geiger Mode Avalanche Photodiode with Cascade Edge Breakdown Suppression[J]. 半导体学报,2008,29(9):1686-1691.
APA	Wu Meng.(2008).A Planar InGaAs/InP Geiger Mode Avalanche Photodiode with Cascade Edge Breakdown Suppression.半导体学报,29(9),1686-1691.
MLA	Wu Meng."A Planar InGaAs/InP Geiger Mode Avalanche Photodiode with Cascade Edge Breakdown Suppression".半导体学报 29.9(2008):1686-1691.