Wet etching and infrared absorption of AlN bulk single crystals

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	Wet etching and infrared absorption of AlN bulk single crystals
	Ke Jianhong
刊名	半导体学报
	2009
卷号	30 期号:7 页码:27-30
中文摘要	the defects and the lattice perfection of an aln (0001) single crystal grown by the physical vapor transport (pvt) method were investigated by wet etching, x-ray diffraction (xrd), and infrared absorption, respectively. a regular hexagonal etch pit density (epd) of about 4000 cm~(-2) is observed on the (0001) a1 surface of an aln single crystal. the epd exhibits a line array along the slip direction of the wurtzite structure, indicating a quite large thermal stress born by the crystal in the growth process. the xrd full width at half maximum (fwhm) of the single crystal is 35 arcsec, suggesting a good lattice perfection. pronounced infrared absorption peaks are observed at wave numbers of 1790, 1850, 2000, and 3000 cm~(-1), respectively. these absorptions might relate to impurities o, c, si and their complexes in aln single crystals.
英文摘要	the defects and the lattice perfection of an aln (0001) single crystal grown by the physical vapor transport (pvt) method were investigated by wet etching, x-ray diffraction (xrd), and infrared absorption, respectively. a regular hexagonal etch pit density (epd) of about 4000 cm~(-2) is observed on the (0001) a1 surface of an aln single crystal. the epd exhibits a line array along the slip direction of the wurtzite structure, indicating a quite large thermal stress born by the crystal in the growth process. the xrd full width at half maximum (fwhm) of the single crystal is 35 arcsec, suggesting a good lattice perfection. pronounced infrared absorption peaks are observed at wave numbers of 1790, 1850, 2000, and 3000 cm~(-1), respectively. these absorptions might relate to impurities o, c, si and their complexes in aln single crystals.; 于2010-11-23批量导入; zhangdi于2010-11-23 12:59:58导入数据到semi-ir的ir; made available in dspace on 2010-11-23t04:59:58z (gmt). no. of bitstreams: 1 3679.pdf: 511704 bytes, checksum: cce19017a45513b37f61003cf6a18eae (md5) previous issue date: 2009; institute of semiconductors, chinese academy of sciences
学科主题	半导体材料
收录类别	CSCD
语种	英语
公开日期	2010-11-23 ; 2011-04-28
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15739]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ke Jianhong. Wet etching and infrared absorption of AlN bulk single crystals[J]. 半导体学报,2009,30(7):27-30.
APA	Ke Jianhong.(2009).Wet etching and infrared absorption of AlN bulk single crystals.半导体学报,30(7),27-30.
MLA	Ke Jianhong."Wet etching and infrared absorption of AlN bulk single crystals".半导体学报 30.7(2009):27-30.