PHOTOLUMINESCENCE SPECTRUM STUDY OF THE GAAS/SI EPILAYER GROWN BY USING A THIN AMORPHOUS SI FILM AS BUFFER LAYER

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	PHOTOLUMINESCENCE SPECTRUM STUDY OF THE GAAS/SI EPILAYER GROWN BY USING A THIN AMORPHOUS SI FILM AS BUFFER LAYER
	HAO MS ; LIANG JW ; ZHENG LX ; DENG LS ; XIAO ZB ; HU XW
刊名	japanese journal of applied physics part 2-letters
	1995
卷号	34 期号:7b 页码:l900-l902
关键词	GAAS/SI PHOTOLUMINESCENCE AMORPHOUS SI SIMS HALL MEASUREMENT DOUBLE CRYSTAL X-RAY CHEMICAL VAPOR-DEPOSITION MOLECULAR-BEAM EPITAXY ON-SI MOCVD TEMPERATURE MECHANISM
ISSN号	0021-4922
通讯作者	hao ms chinese acad sciinst semicondnatl res ctr optoelectr technolpob 912beijing 100083peoples r china.
中文摘要	recently, we reported successful growth of high-quality gaas/si epilayers by using a very thin amorphous si film as buffer layer. in this paper, the impurity properties of this kind of gaas/si epilayers have been studied by using pl spectrum, sims and hall measurement. compared to a typical pl spectrum of the gaas/si epilayers grown by conventional two-step method, a new peak was observed in our pl spectrum at the energy of 1.462 ev, which is assigned to the band-to-silicon acceptor recombination. the sims analysis indicates that the silicon concentration in this kind of gaas/si epilayers is about 10(18) cm(-3). but its carrier concentration (about 4 x 10(17) cm(-3)) is lower than the silicon concentration. the lower carrier concentration in this kind of gaas/si epilayer can be interpreted both as the result of higher compensation and as the result of the formation of the donor-defect complex. we also found that the high-quality and low-si-concentration gaas/si epilayers can be regrown by using this kind of gaas/si epilayer as substrate. the fwhm of the x-ray (004) rocking curve from this regrowth gaas epilayer is 118 '', it is much less than that of the first growth gaas epilayer (160 '') and other reports for the gaas/si epilayer grown by using conventional two-step method (similar to 200 '').
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-11-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15531]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	HAO MS,LIANG JW,ZHENG LX,et al. PHOTOLUMINESCENCE SPECTRUM STUDY OF THE GAAS/SI EPILAYER GROWN BY USING A THIN AMORPHOUS SI FILM AS BUFFER LAYER[J]. japanese journal of applied physics part 2-letters,1995,34(7b):l900-l902.
APA	HAO MS,LIANG JW,ZHENG LX,DENG LS,XIAO ZB,&HU XW.(1995).PHOTOLUMINESCENCE SPECTRUM STUDY OF THE GAAS/SI EPILAYER GROWN BY USING A THIN AMORPHOUS SI FILM AS BUFFER LAYER.japanese journal of applied physics part 2-letters,34(7b),l900-l902.
MLA	HAO MS,et al."PHOTOLUMINESCENCE SPECTRUM STUDY OF THE GAAS/SI EPILAYER GROWN BY USING A THIN AMORPHOUS SI FILM AS BUFFER LAYER".japanese journal of applied physics part 2-letters 34.7b(1995):l900-l902.