BREAKING UP OF MISFIT DISLOCATIONS IN GAASIN0.3GA0.7AS/GAAS HETEROSTRUCTURE

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	BREAKING UP OF MISFIT DISLOCATIONS IN GAASIN0.3GA0.7AS/GAAS HETEROSTRUCTURE
	WU J ; LI W ; FAN TW ; WANG ZG ; DUAN XF
刊名	applied physics letters
	1995
卷号	67 期号:6 页码:846-847
关键词	RELAXATION
ISSN号	0003-6951
中文摘要	the effect of gaas cap layer with different thicknesses in the gaas/in0.3ga0.7as/gaas heterostructure on misfit dislocation is investigated with transmission electron microscopy, and it is found that lines of misfit dislocation break up and move out of the structure when the gaas cap layer thickness exceeds a certain amount. the breaking up and moving out of misfit dislocations, initially confined in the (001) substrate/ingaas epilayer interface, occur mainly along the [110] direction on the interface in the structure. (c) 1995 american institute of physics.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15519]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	WU J,LI W,FAN TW,et al. BREAKING UP OF MISFIT DISLOCATIONS IN GAASIN0.3GA0.7AS/GAAS HETEROSTRUCTURE[J]. applied physics letters,1995,67(6):846-847.
APA	WU J,LI W,FAN TW,WANG ZG,&DUAN XF.(1995).BREAKING UP OF MISFIT DISLOCATIONS IN GAASIN0.3GA0.7AS/GAAS HETEROSTRUCTURE.applied physics letters,67(6),846-847.
MLA	WU J,et al."BREAKING UP OF MISFIT DISLOCATIONS IN GAASIN0.3GA0.7AS/GAAS HETEROSTRUCTURE".applied physics letters 67.6(1995):846-847.