Diamond growth by carbon ion implantation of diamond

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	Diamond growth by carbon ion implantation of diamond
	Lee ST ; Lau WM ; Huang LJ ; Ren Z ; Qin F
刊名	diamond and related materials
	1995
卷号	4 期号:12 页码:1353-1359
关键词	diamond subsurface growth carbon implantation diamond defect structure diamond characterization FILMS CRYSTALS COPPER
ISSN号	0925-9635
中文摘要	medium energy (5-25 kev) c-13(+) ion implantation into diamond (100) to a fluence ranging from 10(16) cm(-2) to 10(18) cm(-2) was performed for the study of diamond growth via the approach of ion beam implantation. the samples were characterized with rutherford backscattering/channelling spectroscopy, raman spectroscopy, x-ray photoemission spectroscopy and auger electron spectroscopy. extended defects are formed in the cascade collision volume during bombardment at high temperatures. carbon incorporation indeed induces a volume growth but the diamond (100) samples receiving a fluence of 4 x 10(17) to 2 x 10(18) at. cm(-2) (with a dose rate of 5 x 10(15) at. cm(-2) s(-1) at 5 to 25 kev and 800 degrees c) showed no he-ion channelling. common to these samples is that the top surface layer of a few nanometers has a substantial amount of graphite which can be removed by chemical etching. the rest of the grown layer is polycrystalline diamond with a very high density of extended defects.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15467]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Lee ST,Lau WM,Huang LJ,et al. Diamond growth by carbon ion implantation of diamond[J]. diamond and related materials,1995,4(12):1353-1359.
APA	Lee ST,Lau WM,Huang LJ,Ren Z,&Qin F.(1995).Diamond growth by carbon ion implantation of diamond.diamond and related materials,4(12),1353-1359.
MLA	Lee ST,et al."Diamond growth by carbon ion implantation of diamond".diamond and related materials 4.12(1995):1353-1359.